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DiodesZetex Dual 2 Type P-Channel MOSFET, -4.5 A, 20 V Enhancement, 6-Pin DFN DMP2065UFDB-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 0.56mm
Length 2mm
Model DMP2065UFDB-7
Width 2mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type DFN
Minimum Operating Temperature -55°C
Standards/Approvals UL 94V-0, RoHS, AEC-Q101, J-STD-020, MIL-STD-202
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id -4.5A
Maximum Drain Source Voltage Vds 20V
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 10.2nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf -0.7V
Transistor Configuration Dual

Key Features

  • The device uses enhancement channel mode for efficient switching.
  • It is housed in a compact 6-pin DFN package suitable for high-density PCB layouts.
  • Typical gate charge is 10.2nC at Vgs, facilitating fast switching.
  • Operates within a wide temperature range from -55°C to +150°C.
  • The MOSFET provides a maximum power dissipation of 1.5 W, suitable for moderate power applications.
  • Automotive standards compliance including AEC-Q100, AEC-Q200, and AEC-Q101 ensured reliability.
  • Forward voltage rated at -0.7V supports effective current control.
  • Dual transistor configuration offers integrated functionality in one chip.

Product Description

DiodesZetex DMP2065UFDB-7 is a dual P-Channel MOSFET designed primarily for surface mount technology in electronic components assemblies. Featuring a maximum continuous drain current of -4.5 A and a maximum drain-source voltage rating of 20 V, this device operates in enhancement mode, making it efficient for switching and amplification tasks.

Its 6-pin Dual Flat No-lead (DFN) package is highly suitable for compact, high-density PCB applications. The MOSFET’s typical gate charge of 10.2nC at Vgs allows for rapid switching speeds, critical in power management and signal processing applications.

This component is rated to handle power dissipation up to 1.5 W and withstand operating temperatures from -55°C up to a maximum of +150°C, ensuring reliable performance in harsh environments. Its dual transistor configuration integrates two identical MOSFETs in one chip, optimizing circuit layout and space utilization.

Additionally, it complies with stringent automotive standards such as AEC-Q100, AEC-Q200, and AEC-Q101, making it suitable for automotive electronics requiring high reliability. The device meets safety requirements with certifications including UL 94V-0 and RoHS compliance.

Typical physical dimensions include a length and width of 2 mm each, and a height of 0.56 mm, reinforcing its suitability for modern miniaturized electronic designs.

The DMP2065UFDB-7 MOSFET finds extensive use in industrial, automotive, telecommunications, and consumer electronic applications where efficient power switching and control are critical.

The device uses enhancement channel mode for efficient switching. It is housed in a compact 6-pin DFN package suitable for high-density PCB layouts. Typical gate charge is 10.2nC at Vgs, facilitating fast switching. Operates within a wide temperature range from -55°C to +150°C.

The MOSFET provides a maximum power dissipation of 1.5 W, suitable for moderate power applications. Automotive standards compliance including AEC-Q100, AEC-Q200, and AEC-Q101 ensured reliability. Forward voltage rated at -0.7V supports effective current control.

Dual transistor configuration offers integrated functionality in one chip. Dimensions are compact with 2mm length, 2mm width, and 0.56mm height. RoHS compliant and UL 94V-0 standard approved for safety. Explore the MOSFET category on EnvMart for additional components to enhance your electronic designs and power management solutions.

DiodesZetex Dual 2 Type P-Channel MOSFET, -4.5 A, 20 V Enhancement, 6-Pin DFN DMP2065UFDB-7
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Frequently Asked Questions

The maximum continuous drain current for the DMP2065UFDB-7 is -4.5 A.

This model has a maximum drain-source voltage rating of 20 V.

The typical gate charge at Vgs for this unit is 10.2 nC.

The dimensions of this MOSFET are 2 mm in length, 2 mm in width, and 0.56 mm in height.

It operates within a temperature range from -55°C to +150°C.

The DMP2065UFDB-7 is housed in a 6-pin Dual Flat No-lead (DFN) package.

This model complies with AEC-Q100, AEC-Q200, and AEC-Q101 automotive standards.

The maximum power dissipation for the DMP2065UFDB-7 is 1.5 W.

The forward voltage rating for this MOSFET is -0.7 V.

This model uses an enhancement channel type for efficient switching.

The DMP2065UFDB-7 features two elements per chip in its dual transistor configuration.

This MOSFET is UL 94V-0 and RoHS compliant, ensuring safety standards are met.

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