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DiodesZetex DMP Type P-Channel MOSFET, 7.4 A Continuous Drain Current, 20 V Drain Source Voltage, 8-Pin TSSOP DMP2021UTS-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.02mm |
| Length | 4.5mm |
| Model | DMP2021UTS-13 |
| Width | 3.1mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | TSSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 59nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features enhancement mode channel operation for efficient switching.
- It has a low on-resistance of 40 milliohms, optimizing power dissipation.
- Designed for surface mount applications with a compact TSSOP 8-pin package.
- Rated for power dissipation of 1.3 watts and can operate between -55°C to 150°C.
- Incorporates a maximum gate source voltage of ±10 V and typical gate charge of 59 nC.
- Low gate threshold voltage enhances switching performance and reduces power loss.
- Compliant with automotive standard AEC-Q101, suitable for robust applications.
- Forward voltage is -1.2 V ensuring reliable conduction under load.
Product Description
DiodesZetex DMP2021UTS-13 is a P-Channel MOSFET designed for high efficiency power management applications with a maximum continuous drain current of 7.4 A and a maximum drain-source voltage of 20 V. Packaged in an 8-pin TSSOP surface mount package, this MOSFET combines low on-resistance of 40 milliohms and enhancement mode operation for superior switching performance.
This device operates over a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 1.3 watts. It features a maximum gate-source voltage rating of ±10 V and a typical gate charge of 59 nC, making it suitable for fast switching applications while minimizing switching losses.
The MOSFET's forward voltage of -1.2 V and low gate threshold voltage make it ideal for battery management, power management functions, and DC-DC converters in automotive and industrial electronics. The compact TSSOP package (4.5 mm length, 3.1 mm width, 1.02 mm height) allows for efficient PCB space utilization.
The product complies with the automotive standard AEC-Q101, ensuring reliability under rigorous conditions. It is manufactured in China and is provided new for use in electronic component assemblies.
This MOSFET features enhancement mode channel operation for efficient switching. Low on-resistance reduces power dissipation. Compact surface mount TSSOP 8-pin package. Wide operating temperature range from -55°C to 150°C.
Maximum gate source voltage of ±10 V ensures device protection. Typical gate charge of 59 nC aids fast switching. Forward voltage is -1.2 V for efficient conduction. Compliant with automotive AEC-Q101 standard. Ideal for battery and power management applications.
Explore more semiconductor devices and MOSFETs in our industrial catalog at EnvMart for diverse industrial, automotive, and electronic manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.4 A.
It has a maximum drain-source voltage of 20 V.
The on-resistance is 40 milliohms, which helps optimize power dissipation.
This model operates within a temperature range of -55°C to 150°C.
It is packaged in an 8-pin TSSOP format with dimensions of 4.5 mm length, 3.1 mm width, and 1.02 mm height.
The typical gate charge is 59 nC, which aids in fast switching applications.
The maximum gate-source voltage rating is ±10 V.
Yes, it complies with the automotive standard AEC-Q101, ensuring reliability under rigorous conditions.
The forward voltage is -1.2 V, ensuring reliable conduction under load.
This model features an enhancement mode P-channel operation.
It is manufactured in China.
The maximum power dissipation is rated at 1.3 watts.
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