Infineon HEXFET N-Channel MOSFET 343 A 40 V Enhancement 3-Pin TO-263 IRLS3034TRLPBF

Infineon IRLS3034TRLPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor device designed to handle heavy power loads efficiently. It supports a maximum continuous drain current of 343 A and a maximum drain-source voltage of 40 V, making it suitable for demanding power management and switching applications.

This MOSFET uses advanced HEXFET technology with an enhancement-mode N-channel design, enabling optimal system efficiency by minimizing conduction losses. The device features a low Rds(on) of 2 milliohms, allowing for high current throughput with minimal heat generation.

Packaged in a TO-263 surface mount configuration with 3 pins, it provides compact and reliable mounting for circuitry on printed circuit boards. The MOSFET can dissipate up to 375 watts of power, supporting robust thermal performance even in challenging industrial environments.

Operating temperature range extends from -55°C up to 175°C, ensuring durability in harsh conditions common in industrial, automotive, and power electronics applications. Key electrical characteristics include a typical gate charge of 108 nanocoulombs and a forward voltage drop of 1.3 volts, balancing switching speed and efficiency.

The maximum gate-source voltage rating is ±20 V, accommodating standard gate drive voltages safely within device limits. Dimensionally, the MOSFET measures approximately 10.67 mm in length, 9.65 mm in height, and 4.83 mm in width, aiding engineers in precise PCB layout and thermal design.

This component is ideal for use in power supplies, motor control circuits, and switching regulators in commercial, industrial, and automotive electronics implementations. Its integration supports designs requiring high efficiency and reliability under continuous load conditions.

Explore a wide selection of MOSFETs and related semiconductor components for your industrial and electronic design needs on EnvMart, your reliable source for high-quality electronic components and devices.

Provides a maximum continuous drain current of 343 amps for heavy-duty power applications. Features a low maximum drain-source resistance of 2 milliohms to reduce conduction losses. Equipped with a TO-263 surface mount package with 3 pins for compact mounting.

Supports high power dissipation up to 375 watts ensuring robust thermal handling. Operates reliably in temperatures ranging from -55°C to a maximum of 175°C. Utilizes an enhancement-mode N-channel HEXFET technology for efficient switching.

Includes typical gate charge of 108 nC at Vgs and a forward voltage of 1.3 V. Maximum gate-source voltage is ±20 V suitable for diverse control voltages. Measures 10.67 mm in length, 9.65 mm in height, and 4.83 mm in width for precise footprint planning.