Infineon HEXFET N-Channel MOSFET 171 A 30 V Enhancement Mode 3-Pin TO-220 IRLB8314PBF

Infineon IRLB8314PBF HEXFET N-Channel MOSFET is engineered for high current and low voltage switching applications. It features a robust design allowing a maximum continuous drain current of 171 A and a maximum drain-source voltage of 30 V. The device utilizes enhancement mode channel architecture to provide efficient conduction with minimal losses.

This power MOSFET is packaged in a 3-pin TO-220 through-hole package suitable for industrial and commercial power electronics applications including motor control, power supply regulation, and high efficiency DC-DC converters. Its low Rds(on) of 3.2 mΩ ensures reduced conduction losses, enhancing overall system efficiency.

The transistor supports a broad operating temperature range from -55°C to 175°C, making it reliable for demanding environments. With a typical gate charge of 40 nC and forward voltage of 1 V, it enables optimized switching performance for rapid and precise control in power circuits.

Mechanical dimensions are 10.67 mm length, 4.83 mm width, and 16.51 mm height, providing a compact footprint for space-constrained designs. The TO-220 package facilitates efficient heat dissipation and mounting versatility for through-hole printed circuit board applications.

Supports maximum continuous drain current of 171 amperes. Maximum drain-source voltage rating of 30 volts. Enhancement mode channel for efficient switching. Low drain-source resistance of 3.2 milliohms minimizes conduction losses.

Robust power dissipation capacity up to 125 watts. Capable of operating between temperatures of -55°C to 175°C. Typical gate charge of 40 nanocoulombs improves switching performance. Forward voltage drop of 1 volt enhances efficiency.

Through-hole mounting with TO-220 package type ensures compatibility with various circuit boards. Compact dimensions with length 10.67 mm, width 4.83 mm, and height 16.51 mm.

This Infineon HEXFET MOSFET is ideal for industrial, electronic manufacturing, power management, and automation applications requiring reliable high-current switching with efficient thermal management. It is suitable for power supplies, motor drives, automotive electronics, and other demanding electrical systems.

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