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Nexperia TrenchMOS Logic Level N-Channel Enhancement Mode FET 75 A, 40 V, 3-Pin TO-263 BUK964R4-40B
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 4.5mm |
| Length | 10.3mm |
| Model | BUK964R4-40B |
| Width | 9.4mm |
| Mount Type | Surface |
| Series | BUK964R4-40B |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 254W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 15V |
Key Features
- Maximum continuous drain current of 75 A allows handling substantial load currents.
- Maximum drain-source voltage rating of 40 V suitable for low voltage power control.
- Low on-state resistance of 4.4mΩ minimizes conduction losses for efficient operation.
- TO-263 surface mount package with 3 pins ensures compact, reliable mounting.
- AEC-Q101 automotive standard compliance guarantees high reliability for automotive use.
- Maximum power dissipation of 254 W supports thermally demanding environments.
- Enhancement mode channel providing logic level gate drive suitable for 12 V loads.
- Wide operating temperature range from -55°C to 175°C ensures durability in harsh conditions.
Product Description
Nexperia BUK964R4-40B is a high-performance TrenchMOS logic level N-Channel enhancement mode Field-Effect Transistor (FET) in a plastic TO-263 package featuring 3 pins. It is engineered with TrenchMOS technology to offer low conduction losses and high reliability. The device is compliant with the AEC-Q101 automotive standard, making it suitable for critical automotive applications.
This FET supports a maximum continuous drain current of 75 A and a maximum drain-source voltage of 40 V, delivering excellent power handling for switching circuits. Its low on-state resistance of 4.4mΩ reduces power losses and improves efficiency in power control devices.
The device is designed for surface mounting on printed circuit boards, with package dimensions of approximately 10.3 mm length, 9.4 mm width, and 4.5 mm height, supporting compact integration. It offers a maximum power dissipation rating of 254 W, suited for thermally demanding environments, and operates reliably over a wide temperature range from -55°C up to 175°C.
Typical gate charge of 64 nC at Vgs conditions enables fast switching performance, making it ideal for use with logic level gate drives and 12 V load applications such as automotive systems, motors, lamps, and solenoids. The maximum gate-source voltage is 15 V, ensuring robust gate protection and device stability.
Designed for general purpose power switching and automotive system use, the BUK964R4-40B delivers robust performance and durability required for industrial and automotive electrical control solutions.
Maximum continuous drain current of 75 A supports demanding power loads. Low on-state resistance ensures high efficiency power switching. Wide temperature range (-55°C to 175°C) suits harsh operating environments. Compact TO-263 package facilitates surface mounting and space savings.
Complies with rigorous AEC-Q101 automotive quality standards. High power dissipation capability of 254 W for thermally challenging applications. Typical gate charge allows for fast and efficient switching operation. Designed for automotive, industrial motors, and power load switching.
Explore more semiconductor products and power MOSFET options at EnvMart to find the right components for advanced industrial and automotive electronic systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 75 A, allowing it to handle substantial load currents effectively.
This unit has a maximum drain-source voltage rating of 40 V, making it suitable for low voltage power control applications.
The on-state resistance of this model is 4.4 mΩ, which minimizes conduction losses for efficient operation.
The TO-263 package has dimensions of approximately 10.3 mm in length, 9.4 mm in width, and 4.5 mm in height.
It supports a maximum power dissipation of 254 W, which is suitable for thermally demanding environments.
The typical gate charge for this model is 64 nC at Vgs conditions, enabling fast switching performance.
Yes, this model complies with the AEC-Q101 automotive standard, ensuring high reliability for automotive applications.
It features an enhancement mode channel, which provides logic level gate drive suitable for 12 V loads.
The maximum gate-source voltage for this MOSFET is 15 V, ensuring robust gate protection and device stability.
This model is designed for surface mounting on printed circuit boards, facilitating compact integration.
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