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Infineon HEXFET N-Channel MOSFET, 128 A Current, 75 V Drain Source Voltage, 230 W Power Dissipation, 3-Pin IRFS3307ZTRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS3307ZTRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 128A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 5.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 79nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High maximum continuous drain current of 128 A for robust power handling.
- Maximum drain-source voltage rating of 75 V suited for moderate voltage applications.
- Enhanced HEXFET technology reduces conduction losses for better efficiency.
- Low drain-source resistance of 5.8 milliohms ensures minimal heat generation.
- Maximum power dissipation of 230 W supports heavy-duty operation.
- Wide operating temperature range from -55°C to 175°C for reliability.
- Typical gate charge of 79 nC enables fast switching performance.
- Package height 4.83 mm, length 10.67 mm, and width 9.65 mm for easy PCB integration.
Product Description
Infineon IRFS3307ZTRLPBF is a HEXFET N-Channel MOSFET designed to deliver high efficiency and reliability in electronic circuits requiring robust power handling. Its 128 ampere continuous drain current and 75 volts maximum drain-source voltage make it suitable for power management applications in industrial, consumer electronics, and automotive sectors.
The device utilizes Infineon's advanced HEXFET technology, significantly reducing conduction losses through its exceptionally low Rds(on) value of 5.8 milliohms. This low resistance minimizes energy loss and thermal dissipation, thus improving overall system efficiency.
With a maximum power dissipation rating of 230 watts, this MOSFET can operate under demanding electrical loads while maintaining stability over a wide temperature range from -55°C to 175°C. The enhancement mode channel type ensures rapid switching and effective amplification capabilities.
Designed as a surface-mount component with a TO-263 package, the IRFS3307ZTRLPBF offers easy integration onto printed circuit boards. The 3-pin layout simplifies connections for gate, drain, and source terminals, optimizing space and manufacturing processes.
This product finds applications in various sectors including industrial power supplies, motor drives, power conversion circuits, and automotive electronics where high current and moderate voltage switching is essential.
High maximum continuous drain current of 128 A for robust power handling. Maximum drain-source voltage rating of 75 V suited for moderate voltage applications. Enhanced HEXFET technology reduces conduction losses for better efficiency.
Low drain-source resistance of 5.8 milliohms ensures minimal heat generation. Maximum power dissipation of 230 W supports heavy-duty operation. Wide operating temperature range from -55°C to 175°C for reliability. Typical gate charge of 79 nC enables fast switching performance.
Package height 4.83 mm, length 10.67 mm, and width 9.65 mm for easy PCB integration. Surface mount type with 3 pins for efficient assembly. Built with enhancement mode N-channel MOSFET for effective power amplification. Explore more power MOSFETs and other semiconductor components to optimize your electrical designs with EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 128 A, allowing it to handle robust power requirements effectively.
It has a maximum drain-source voltage rating of 75 V, making it suitable for moderate voltage applications.
This MOSFET can dissipate up to 230 W, supporting heavy-duty operation under demanding electrical loads.
The drain-source resistance is 5.8 milliohms, which helps minimize heat generation during operation.
It operates over a wide temperature range from -55°C to 175°C, ensuring reliability in various environments.
The typical gate charge is 79 nC, which enables fast switching performance in electronic circuits.
This model is packaged in a TO-263 type, designed for surface mounting on printed circuit boards.
It features a 3-pin layout for gate, drain, and source connections, optimizing space for assembly.
It uses an enhancement mode N-channel design, which is effective for power amplification.
The maximum gate-source voltage rating is -20 to +20 V, providing flexibility in circuit design.
This model is suitable for applications in industrial power supplies, motor drives, power conversion circuits, and automotive electronics.
The dimensions are 4.83 mm in height, 10.67 mm in length, and 9.65 mm in width, facilitating easy integration into PCB layouts.
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