Infineon CoolMOS CE N-Channel MOSFET, 6.8 A, 650 V Enhancement Mode, 3-Pin TO-252 IPD60R1K0CEAUMA1

Infineon IPD60R1K0CEAUMA1 CoolMOS CE series N-Channel MOSFET boasts a maximum continuous drain current of 6.8 A and a drain-source voltage rating of 650 V. This enhancement mode device utilizes advanced superjunction CoolMOS technology to achieve low switching and conduction losses, improving system efficiency and thermal performance.

Featuring a compact 3-pin TO-252 surface mount package, the MOSFET supports easy integration into automated manufacturing processes and provides excellent heat dissipation. It withstands a maximum power dissipation of 61 W and operates reliably across a broad temperature range from -40°C to 150°C, meeting stringent industrial operational requirements.

This MOSFET is engineered to handle both hard and soft switching scenarios, making it well-suited for power factor correction stages, hard switching PWM stages, and resonant switching applications. The device’s low gate charge (13 nC typical) reduces driver power consumption and improves switching speed, further enhancing energy efficiency.

Its robust body diode increases reliability under hard commutation stress, and the maximum gate-source voltage tolerance of ±30 V ensures stable operation in diverse electrical environments. The forward voltage of 900 mV optimizes conduction losses, contributing to cooler overall system operation.

The IPD60R1K0CEAUMA1 is ideal for use in sectors such as lighting, server power supplies, and telecommunication equipment, providing enhanced performance and durability in demanding industrial and commercial applications.

Employs CoolMOS superjunction technology to reduce conduction and switching losses. Equipped with a robust body diode to withstand hard commutation. Low gate charge characteristic simplifies gate driver requirements. Wide operating temperature range from -40°C to 150°C for versatile applications.

Suitable for both hard and soft switching applications in power factor correction and PWM stages. Compact 3-pin TO-252 surface mount package facilitating efficient heat dissipation. Maximum power dissipation of 61 watts for high-performance operation.

Maximum gate-to-source voltage of ±30 V ensures robust operation. Forward voltage of 900 mV optimizes conduction efficiency. Ideal for sectors including lighting, servers, and telecom equipment.

This MOSFET product is a reliable choice for power electronics demanding high efficiency and durability, backed by Infineon's trusted brand reputation. Browse more semiconductor devices and MOSFETs in the Infineon range on EnvMart for compatible components.