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onsemi Single N-Channel JFET Transistor 25 V 24 to 60 mA 3-Pin SOT-23 MMBFJ310LT1G

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.94mm
Length 2.9mm
Model MMBFJ310LT1G
Width 1.3mm
Mount Type Surface
Configuration Single
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type JFET
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Drain Source Voltage Vds 25V
Maximum Power Dissipation Pd 225mW
Maximum Gate Source Voltage Vgs 25V
Drain Source Current Ids 24 to 60 mA

Key Features

  • This JFET transistor is configured as a single-channel device.
  • It features a maximum power dissipation of 225 mW ensuring efficient performance.
  • Designed to operate within a temperature range from -55°C to 150°C.
  • The transistor package size is compact with dimensions approximately 2.9 mm length, 1.3 mm width and 0.94 mm height.
  • Maximum gate-source voltage is rated at 25 V to ensure reliable operation.
  • Suitable for various discrete semiconductor applications including amplification and switching.
  • This device is surface-mounted to optimize space in electronic assemblies.
  • Lacks automotive-specific standard compliances but meets general semiconductor standards.

Product Description

onsemi MMBFJ310LT1G is a high-quality single N-channel junction field-effect transistor (JFET) aimed at electronic applications requiring precise control at low currents and voltages. It is delivered in a compact surface-mount SOT-23 package with three pins, facilitating integration into modern PCBs and compact circuits.

This JFET supports a maximum drain-source voltage (Vds) of 25 V and drain-source current (Ids) ranging from 24 mA up to 60 mA, while dissipating a maximum power of 225 mW. Its operational temperature parameters span from -55°C minimum to 150°C maximum, ensuring functionality in diverse environmental conditions.

The device dimensions are precisely controlled, measuring 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height, offering an excellent size-to-performance ratio for compact electronic design. The gate-source voltage maximum is set at 25 V, making it suitable for circuits requiring stable voltage control.

This JFET is typically used in discrete semiconductor roles such as amplification or switching within industrial, consumer electronics, and telecommunications sectors. The device does not hold automotive certification but complies with standard semiconductor quality requirements.

This transistor comes ready for surface mounting which reduces assembly complexity and enhances production throughput. It ensures reliable low power operation in sensitive analog and digital circuits. Compact size supports miniaturization of electronic modules.

Suitable for a range of industrial and commercial electronics applications. Ideal choice for designers requiring low noise and high input impedance devices.

Explore more Discrete Semiconductor products by onsemi and improve your electronic project designs with reliable, efficient components. Discover a wide variety of JFET transistors on EnvMart to meet specific circuit requirements.

onsemi Single N-Channel JFET Transistor 25 V 24 to 60 mA 3-Pin SOT-23 MMBFJ310LT1G
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Frequently Asked Questions

The maximum power dissipation of this JFET transistor is 225 mW.

It operates within a temperature range from -55°C to 150°C.

The dimensions are approximately 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height.

The maximum drain-source voltage (Vds) is rated at 25 V.

The drain-source current (Ids) ranges from 24 mA to 60 mA.

This JFET transistor has three pins.

It is packaged in a compact SOT-23 surface-mount configuration.

The maximum gate-source voltage (Vgs) is rated at 25 V.

This model is suitable for discrete semiconductor applications including amplification and switching in various electronic sectors.

It is configured as a single-channel device.

The country of origin for this JFET transistor is India.

This transistor features an N-channel type configuration.

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