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onsemi N-Channel MOSFET 60 V 250 A Enhancement Mode 5-Pin DFN Package NTMFS5H600NLT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NTMFS5H600NLT1G |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NTMFS5H600NL |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 250A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 89nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High maximum continuous drain current of 250 amperes ensures robust performance.
- Maximum drain-source voltage rating of 60 volts suits low-voltage switching applications.
- Low drain-source resistance of 1.7 milliohms reduces conduction losses.
- Enhancement mode channel type provides efficient switching characteristics.
- Compact surface mount DFN package with dimensions 6.1 mm length, 5.1 mm width, and 1.05 mm height.
- Supports a wide operating temperature range from -55°C to 150°C for industrial reliability.
- Maximum power dissipation capability of 160 watts enables high power handling.
- Maximum gate-source voltage rating of ±20 volts for gate drive tolerance.
Product Description
onsemi NTMFS5H600NLT1G is a high-performance N-Channel power MOSFET designed to handle continuous drain currents up to 250 amperes and drain-source voltages up to 60 volts. This enhancement mode MOSFET features a compact 5-pin Dual Flat No-Lead (DFN) surface mount package, measuring 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height, optimized for space-efficient applications.
The transistor exhibits a low drain-source resistance of only 1.7 milliohms, significantly reducing power loss and improving efficiency in switching circuits. It operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive environments. The device supports a maximum gate-source voltage of ±20 V, accommodating robust gate driving conditions while maintaining fast switching speed aided by a typical gate charge of 89 nC.
With a maximum power dissipation of 160 watts and a forward voltage drop of 1.2 volts, this MOSFET is engineered for high power applications including power management modules, motor control, and high-speed switching in power supplies and converters. Its surface mount DFN package facilitates automated PCB assembly and compact system designs.
The product does not hold specific certifications but is designed in compliance with standard industrial practices. High continuous drain current of 250 A for robust power handling. Low on-resistance minimizes conduction losses during operation.
Compact and thermally efficient 5-pin DFN package. Wide operating temperature range ensures durability in harsh conditions. High power dissipation capability supports demanding applications. Wide gate voltage tolerance enhances design flexibility.
Fast switching enabled by low gate charge characteristics. Reliable forward voltage performance for efficient conduction. Ideal for industrial, automotive, power management, and manufacturing uses. Surface mount design supports modern PCB assembly processes.
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Frequently Asked Questions
The maximum continuous drain current for this model is 250 amperes, allowing for robust performance in high power applications.
This MOSFET has a maximum drain-source voltage rating of 60 volts, making it suitable for low-voltage switching applications.
The drain-source resistance is 1.7 milliohms, which helps to reduce conduction losses during operation.
It operates reliably across a wide temperature range from -55°C to 150°C, suitable for industrial and automotive environments.
The maximum gate-source voltage rating for this model is ±20 volts, providing flexibility in gate drive conditions.
The DFN package measures 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height, optimized for compact applications.
This MOSFET can dissipate up to 160 watts, enabling it to handle high power applications effectively.
The typical gate charge at Vgs is 89 nC, which supports fast switching characteristics.
The forward voltage drop is 1.2 volts, which contributes to efficient conduction during operation.
It supports surface mounting, making it suitable for automated PCB assembly and compact designs.
This model utilizes an N-channel type, which provides efficient switching characteristics in power applications.
This MOSFET is part of the NTMFS5H600NL series, designed for high-performance applications.
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