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onsemi N-Channel Power MOSFET 40V 235A Surface Mount 8-Pin DFN Package NTMFS5C430NT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NTMFS5C430NT1G |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NTMFS5C430N |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-Free, RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 235A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 106W |
| Typical Gate Charge Qg @ Vgs | 65nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High maximum continuous drain current of 235 amperes ensures excellent power handling.
- Designed for surface mounting with a compact 8-pin DFN package.
- Low maximum drain source resistance of 1.7 milliohms reduces power loss.
- Enhanced channel mode supports reliable switching performance.
- Maximum power dissipation rating of 106 watts for robust thermal management.
- Wide operating temperature range from -55°C to 175°C for demanding environments.
- Typical gate charge of 65 nanocoulombs at Vgs which optimizes switching speed.
- Compliant with RoHS and Pb-Free environmental standards.
Product Description
onsemi NTMFS5C430NT1G is a high-performance N-Channel Power MOSFET featuring a maximum continuous drain current of 235 A and a drain source voltage of 40 V. It is housed in an 8-pin Dual Flat No-lead (DFN) surface mount package that offers a low profile, making it suitable for space-constrained electronic and power management applications.
This device operates with an enhancement channel mode providing efficient switching characteristics indispensable in power conversion and management circuits. It delivers low conduction losses with a maximum drain source resistance of 1.7 milliohms, supporting applications requiring high current handling with minimal thermal dissipation.
The MOSFET supports a maximum power dissipation of 106 W and features a typical gate charge of 65 nC at gate to source voltage, aiding in fast switching with low gate drive power. It operates reliably over a wide temperature range from -55°C to 175°C, ensuring durability in industrial, automotive, and commercial environments.
The compact dimensions (6.1 mm length, 5.1 mm width, and 1.05 mm height) allow integration into high-density circuit boards. Compliance with environmental standards such as RoHS and Pb-Free certifications assures the MOSFET meets international ecological requirements.
Typical uses include power supply regulation, motor drivers, battery management systems, and load switching in industrial and electronic applications. It is optimized for surface mounting on printed circuit boards in high-volume manufacturing.
High continuous current rating of 235 A for demanding power applications. Compact 8-pin DFN surface mount package allows efficient PCB integration. Low drain-source resistance minimizes conduction losses. Wide temperature operation from -55°C to 175°C suitable for harsh environments.
RoHS and Pb-Free compliant for environmentally friendly design. Suitable for power conversion, motor control, and load switching tasks. Efficient gate charge characteristics enabling faster switching. Robust power dissipation capacity enhances reliability.
Explore more semiconductor solutions and Power MOSFETs at EnvMart for your industrial and commercial electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for the NTMFS5C430NT1G is 235 amperes.
This model has a maximum drain-source voltage rating of 40 volts.
The dimensions of the package are 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height.
The maximum power dissipation rating for this MOSFET is 106 watts.
The typical gate charge at gate to source voltage (Vgs) is 65 nanocoulombs.
It operates over a wide temperature range from -55°C to 175°C.
This device utilizes an enhancement channel mode for efficient switching characteristics.
The maximum drain-source resistance is 1.7 milliohms, which helps minimize conduction losses.
Yes, it is compliant with RoHS and Pb-Free environmental standards.
It is suitable for applications such as power supply regulation, motor drivers, and battery management systems.
The forward voltage for this model is 1.2 volts.
The maximum gate-source voltage rating is -20 to +20 volts.
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