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onsemi NPN Transistor 600 mA, 40 V, 3-Pin SOT-23 Package, Surface Mount, AEC-Q101 MMBT4401LT1G

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onsemi NPN Transistor 600 mA, 40 V, 3-Pin SOT-23 Package, Surface Mount, AEC-Q101 MMBT4401LT1G

Name: onsemi NPN Transistor 600 mA, 40 V, 3-Pin SOT-23 Package, Surface Mount, AEC-Q101 MMBT4401LT1G
Brand: onsemi
SKU: 196933
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.94mm
Length	2.9mm
Model	MMBT4401LT1G
Width	1.3mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	20
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	60V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	600mA
Transistor Configuration	Single
Maximum Transition Frequency ft	250MHz
Nexperia PMBT4401,215 NPN Transistor, 600 mA, 40 V, 3-Pin SOT-23Brand	Nexperia
onsemi MMBT4401 NPN Bipolar Transistor, 600 mA, 40 V, 3-Pin SOT-23Brand	ON Semiconductor

Key Features

Supports maximum DC collector current of 600 mA.
Maximum collector-emitter voltage rating up to 40 volts.
Surface mount transistor featuring a standard SOT-23 package.
Operates reliably in temperature range from -55°C to 150°C.
Meets automotive AEC-Q101 qualification standards.
Single NPN transistor configuration with three pins.
Maximum power dissipation of 300 mW.
High transition frequency of up to 250 MHz for fast switching applications.

Product Description

onsemi MMBT4401LT1G is a high-performance NPN bipolar transistor designed for general-purpose amplification and switching applications in electronics and electrical systems. It supports a collector current up to 600 mA and withstands maximum collector-emitter voltage of 40 V. The device is housed in a 3-Pin SOT-23 surface mount package, facilitating compact PCB layouts and automated assembly.

The transistor features a maximum power dissipation rating of 300 mW, enabling it to operate efficiently under moderate power conditions. It can function over a wide ambient temperature range from -55°C to 150°C, making it suitable for harsh industrial, automotive, and commercial environments. Additionally, it complies with the automotive industry’s AEC-Q101 qualification, assuring reliability in vehicle electronics.

Designed with a high transition frequency up to 250 MHz and a minimum DC current gain of 20, the MMBT4401LT1G transistor is well suited for fast switching and amplification in communication, control, and sensor circuits. Its compact physical dimensions of 2.9 mm length, 1.3 mm width, and 0.94 mm height enable dense component placement on circuit boards.

Supports collector current up to 600 mA for moderate power loads. Maximum collector-emitter voltage of 40 V ensures robust voltage handling capability. Compact 3-Pin SOT-23 package allows easy surface mounting on PCBs. AEC-Q101 automotive standard compliance provides high reliability for vehicle electronics.

Wide operating temperature range from -55°C to 150°C adapts to harsh environments. Maximum power dissipation of 300 mW supports efficient heat handling. High transition frequency 250 MHz suits high-speed switching applications.

Minimum DC current gain of 20 enables reliable signal amplification. Small package dimensions optimize PCB space utilization.

This transistor is ideal for use in industrial, automotive, consumer electronics, and communication equipment. It supports amplification, switching, and signal processing tasks in various circuit designs.

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