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Infineon HEXFET N-Channel MOSFET 64A 55V Enhancement Mode 3-Pin TO-220 IRFI3205PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.8mm |
| Length | 10.75mm |
| Model | IRFI3205PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 64A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 0.036Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 63W |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-isolated MOSFET,IRFI3205 56A 55VBrand | International Rectifier |
Key Features
- This MOSFET features enhancement mode technology for consistent switching performance.
- Low on-resistance of 0.036 ohms reduces conduction losses and heat generation.
- Maximum power dissipation rating of 63W supports effective thermal management.
- Operates reliably in temperature ranges from -55°C to 175°C for diverse environments.
- Quick switching speeds make it suitable for high-frequency applications.
- Its TO-220 package design allows simple through-hole PCB mounting.
- Supports pulsed drain currents up to 390A for transient demands.
- Designed for power supply, DC-DC converter, motor control, inverter, and electric vehicle applications.
Product Description
Infineon IRFI3205PBF HEXFET N-Channel MOSFET is a high-efficiency transistor specifically engineered for demanding electronic and electrical applications. Operating with a maximum continuous drain current of 64A and a maximum drain-source voltage of 55V, it ensures reliable power management and control. Packaged in a 3-pin TO-220 form factor, it supports conventional through-hole PCB mounting suitable for various industrial designs.
This device utilizes enhancement mode technology with an extremely low maximum drain-source resistance of 0.036Ω, minimizing power loss and heat production during operation. The MOSFET can dissipate up to 63W of power, enabling effective thermal management in high-performance circuits. It also tolerates a wide operating temperature range from -55°C up to 175°C, which makes it suitable for harsh and diverse environmental conditions.
Fast switching speeds provided by this MOSFET make it ideal for applications including power supplies, DC-DC converters, motor control systems, inverter circuits within renewable energy setups, and electric vehicle power management. The device supports pulsed drain currents of up to 390A, accommodating transient high-demand load conditions.
Continuous drain current capability of 64A for high-performance applications. Drain-source voltage rating of 55V enhances circuit reliability. Low on-resistance of 0.036Ω to decrease power loss and heat. Power dissipation rating of 63W for robust thermal management.
Wide operating temperature range (-55°C to 175°C) for diverse environments. Three-pin TO-220 package allows standard through-hole mounting. Rated for pulsed drain currents up to 390A to support transient demands. Suitable for power supplies, DC-DC converters, motor controls, inverters, and electric vehicles.
Infineon's HEXFET series represents a reliable and efficient choice for those requiring robust N-channel MOSFETs in industrial, automotive, and renewable energy applications. Explore the broad range of MOSFETs available at EnvMart to complete your power electronics projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 64A.
This MOSFET has a maximum drain-source voltage rating of 55V.
It has a maximum power dissipation rating of 63W, which supports effective thermal management.
The maximum drain-source resistance is 0.036Ω, which helps minimize power loss and heat generation.
It operates reliably within a temperature range from -55°C to 175°C.
This model comes in a 3-pin TO-220 package type, allowing for through-hole mounting.
It is suitable for applications including power supplies, DC-DC converters, motor control systems, inverters, and electric vehicles.
The maximum gate-source voltage is rated at -20V to +20V.
The dimensions are 10.75mm in length, 4.83mm in width, and 9.8mm in height.
This model features an N-channel configuration with enhancement mode technology.
It supports pulsed drain currents of up to 390A, accommodating transient demands.
The country of origin for this MOSFET is India.
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