$0.94
$0.91
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi QFET Type P-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 FQD17P06TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FQD17P06TM |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 135mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- This MOSFET uses proprietary high cell density DMOS technology for high performance.
- It features low on-state resistance for efficient switching and low power dissipation.
- Designed for rugged and reliable operation in demanding electronic applications.
- Operates in an enhancement mode with voltage-controlled P-channel switching.
- Supports a maximum gate-source voltage range of -25 V to +25 V.
- Typical gate charge measured at 21 nC ensures fast switching capabilities.
- Maximum power dissipation is rated at 2.5 W for safe thermal operation.
- Device dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
Product Description
onsemi FQD17P06TM is a high-density cell design, enhancement-mode P-Channel MOSFET designed for surface-mount applications in power management and switching circuits.
Manufactured using ON Semiconductor's proprietary DMOS technology, this device offers low on-state resistance (135 mΩ max) and high saturation current to deliver efficient, rugged, and reliable switching performance.
The MOSFET supports a maximum continuous drain current of 12 A and a maximum drain-source voltage of 60 V, making it suitable for various industrial and commercial applications such as load switching, DC/DC converters, battery protection, and DC motor control.
Its compact TO-252 3-pin package offers easy surface mounting on PCBs and facilitates thermal management with a power dissipation rating of up to 2.5 W.
Key operational characteristics include a gate-source voltage range of -25 to +25 V, forward voltage of -4 V, and a typical gate charge of 21 nC at Vgs, enabling fast switching and control.
With an operating temperature range from -55°C to 150°C, the FQD17P06TM is engineered for harsh environmental conditions while maintaining performance. This MOSFET features proprietary DMOS technology for high cell density and efficiency.
Low Rds(on) of 135 mΩ reduces conduction losses during operation. Designed for surface mounting with a compact TO-252 package. Supports high drain current of 12 A with robust operation up to 150°C. Suitable for load switching and power management in industrial and commercial electronics.
Gate voltage range of ±25 V allows flexible control options. Forward voltage and gate charge ensure rapid switching performance. Dimensions are optimized for PCB integration with a length of 6.73 mm. Wide ambient temperature range makes it fit for automotive and industrial environments (non-certified).
Applications include DC/DC converters and battery protection circuits.
This product is new and manufactured to high-quality standards by onsemi in compliance with industrial requirements. It does not carry specific automotive certification but maintains rugged reliability for general-purpose electronic uses.
Explore EnvMart's comprehensive semiconductor and discrete component categories for similar reliable power switching devices from leading brands like onsemi to support your design and production needs.
Explore more products in our Discrete Semiconductor category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
It can handle a maximum drain-source voltage of 60 V.
The typical gate charge at Vgs is 21 nC.
The maximum on-state resistance (Rds(on)) is 135 mΩ.
The operating temperature range is from -55°C to 150°C.
It comes in a TO-252 package type.
The maximum power dissipation is rated at 2.5 W.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The gate-source voltage range is -25 V to +25 V.
This MOSFET is suitable for applications such as load switching, DC/DC converters, battery protection, and DC motor control.
The channel type is P-Channel.
It uses proprietary high cell density DMOS technology for high performance.
Related Products
$0.67
$0.65
-3%
New
Other Products from this brand
$6.86
$6.66
-3%
New
$0.97
$0.94
-3%
New
$0.06
$0.06
-3%
New
Recently Viewed Products
$0.94
$0.91
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent