$1.63
$1.58
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET N-Channel Power MOSFET 42 A, 100 V TO-220 Package, Enhancement Mode IRF1310NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF1310NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 36mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRF1310N 36A 100VBrand | International Rectifier |
| MTP33N10EBrand | ON Semiconductor |
Key Features
- Offers a maximum continuous drain current of 42 amperes for high current applications.
- Maximum drain-source voltage of 100 volts suitable for medium voltage circuits.
- Low drain-source resistance of 36 milliohms reduces conduction losses for improved efficiency.
- TO-220 package provides effective heat dissipation and easy mounting through-hole configuration.
- Supports an enhancement mode channel for reliable switching performance.
- High power dissipation capacity of 160 watts for robust thermal performance.
- Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
- Typical gate charge of 110 nanocoulombs enables fast switching speeds.
Product Description
Infineon IRF1310NPBF HEXFET N-Channel Power MOSFET is a high-performance semiconductor device intended for power management and switching in industrial, automotive, and electronic applications. Featuring a maximum continuous drain current of 42 A and a maximum drain-source voltage of 100 V, this enhancement mode MOSFET in a TO-220 package is designed for high efficiency and reliability.
The device boasts a low on-resistance of 36 mΩ which significantly reduces conduction losses, thus enhancing system efficiency and minimizing heat generation. Capable of dissipating up to 160 W of power, it is suitable for demanding power circuits where thermal management is critical.
Its operating temperature range from -55°C to 175°C provides wide environmental tolerance including automotive and industrial environments. The gate charge of 110 nC at 10 V gate-source voltage ensures swift switching and minimal switching losses in high-frequency applications.
The TO-220 package and through-hole mount type simplify integration into printed circuit boards, guaranteeing mechanical stability and effective heat dissipation through heat sinks. The device supports a maximum gate-source voltage rating of ±20 V, giving robustness against gate voltage spikes.
42 A maximum continuous drain current. 100 V drain-source voltage rating. 36 mΩ on-resistance for high efficiency. TO-220 through-hole package for easy mounting. Enhancement mode operation ensures reliable switching. 160 W maximum power dissipation capacity.
Wide operating temperature range from -55°C to 175°C. 110 nC typical gate charge enables fast switching. ±20 V maximum gate-source voltage protection. Compact dimensions for versatile applications.
This MOSFET is ideal for industrial power supplies, automotive control systems, and electronic switching devices where efficiency and reliability are paramount. Infineon’s HEXFET technology guarantees high performance with minimal losses, making it a preferred choice for engineers designing power management circuits.
Explore a wide range of Infineon power and discrete semiconductor components on EnvMart for your electronic systems development needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 42 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
It features a low on-resistance of 36 mΩ, which helps reduce conduction losses.
The maximum power dissipation capacity of this unit is 160 W.
It operates within a wide temperature range from -55°C to 175°C.
The typical gate charge is 110 nC at a gate-source voltage of 10 V.
This model uses a through-hole mounting type, which simplifies integration into printed circuit boards.
It is packaged in a TO-220 configuration, which provides effective heat dissipation.
The maximum gate-source voltage rating is ±20 V, providing robustness against voltage spikes.
This MOSFET is suitable for industrial power supplies, automotive control systems, and electronic switching devices.
The dimensions of this model are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
It is an N-channel MOSFET, designed for enhancement mode operation.
Related Products
$0.19
$0.19
-3%
New
Other Products from this brand
Recently Viewed Products
$1.63
$1.58
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent