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Vishay N-Channel MOSFET, 46 A, 200 V Enhancement Mode, 3-Pin TO-247 Package IRFP260PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP260PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP260 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 280W |
| Typical Gate Charge Qg @ Vgs | 230nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.8V |
| N-channel MOSFET,IRFP260 46A 200V 25pcsBrand | Vishay |
Key Features
- Designed for enhancement mode switching applications.
- Supports a maximum power dissipation of 280 W.
- Features a low maximum drain-source resistance of 55 mΩ.
- Operates reliably within a temperature range from -55°C to 150°C.
- Typical gate charge of 230 nC allows efficient switching.
- Maximum gate-source voltage rating of ±20 V prevents gate damage.
- Compact dimensions with 20.7 mm height and 15.87 mm length.
- Ideal for power management in electronics and industrial applications.
Product Description
Vishay IRFP260PBF is a high-performance N-Channel MOSFET designed for power switching and amplification applications. It supports a maximum continuous drain current of 46 A and withstands a drain-source voltage up to 200 V. This device operates in enhancement mode and is housed in a robust 3-pin TO-247 package optimized for through-hole mounting.
With a low on-resistance (Rds) of 55 mΩ and a peak power dissipation of 280 W, the IRFP260PBF MOSFET is suitable for efficient power management and regulation in electronic circuits. It can reliably operate within a wide temperature range from -55°C to 150°C, ensuring durable performance under demanding industrial and commercial conditions.
The MOSFET features a typical gate charge of 230 nC at Vgs, enabling fast switching capabilities while minimizing switching losses. It supports a maximum gate-source voltage of ±20 V, safeguarding the gate against over-voltage damage during operation.
Dimensionally compact, with a height of 20.7 mm, length of 15.87 mm, and a width of 5.31 mm, this component can be integrated into various circuit designs with space constraints. Its 3-pin configuration facilitates easy mounting and connectivity through a through-hole method.
This Vishay IRFP260PBF MOSFET is widely used in power electronics, industrial controls, motor drives, power converters, and other high-current switching applications. Its reliable characteristics make it suitable for laboratory, manufacturing, and commercial engineering projects requiring efficient semiconductor switching devices.
Designed for enhancement mode switching applications. Supports a maximum power dissipation of 280 W. Features a low maximum drain-source resistance of 55 mΩ. Operates reliably within a temperature range from -55°C to 150°C.
Typical gate charge of 230 nC allows efficient switching. Maximum gate-source voltage rating of ±20 V prevents gate damage. Compact dimensions with 20.7 mm height and 15.87 mm length. Ideal for power management in electronics and industrial applications.
Explore other semiconductor devices and MOSFET options in the Electronics & Electricals category at EnvMart for your diverse project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 46 A.
It can withstand a maximum drain-source voltage of 200 V.
The maximum drain-source resistance (Rds) is 55 mΩ.
The typical gate charge at Vgs is 230 nC.
It operates reliably within a temperature range from -55°C to 150°C.
This model is housed in a 3-pin TO-247 package optimized for through-hole mounting.
It supports a maximum power dissipation of 280 W.
The maximum gate-source voltage rating is ±20 V.
The dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
It is widely used in power electronics, industrial controls, motor drives, and power converters.
The IRFP260PBF has a pin count of 3.
This model is an N-channel MOSFET, designed for enhancement mode applications.
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