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Infineon HEXFET N-Channel MOSFET 64 A 55 V Enhancement Mode 3-Pin TO-220 IRFZ48NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRFZ48NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 64A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 14mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 130W |
| Typical Gate Charge Qg @ Vgs | 81nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRFZ48N 62A 55V 50pcsBrand | International Rectifier |
Key Features
- Supports continuous drain current up to 64 amperes for robust performance.
- Utilizes enhancement mode for enhanced switching characteristics and lower losses.
- Features low drain-source resistance of 14 milliohms to maximize efficiency.
- Operates reliably within a wide temperature range from -55°C to 175°C.
- Comes in a TO-220 3-pin through-hole package suitable for standard PCB mounting.
- Maximum power dissipation rating of 130 watts with adequate cooling.
- Capable of handling gate-source voltages up to ±20 volts safely.
- Ideal for industrial automation, power management, automotive systems, and motor controls.
Product Description
Infineon IRFZ48NPBF HEXFET N-Channel MOSFET is a high-performance power semiconductor designed for demanding electronic applications requiring efficient switching and high current handling capabilities. Rated for a continuous drain current of 64 A and a maximum drain-source voltage of 55 V, this enhancement mode device delivers superior efficiency through its low Rds(on) of 14 mΩ, minimizing power losses during operation.
The MOSFET is packaged in a TO-220 3-pin through-hole format, facilitating reliable mounting on standard printed circuit boards while allowing efficient heat dissipation. It supports a power dissipation of up to 130 W, making it suitable for high-load scenarios when adequate cooling is applied.
Designed to operate in extreme environments, this component has an operating temperature range from -55°C to +175°C, ensuring reliable performance across harsh industrial and automotive conditions. The device tolerates gate-source voltages up to ±20 V and is fully avalanche rated, providing enhanced safety and protection from transient voltage spikes.
This MOSFET is ideal for driving inductive loads in automation systems, managing power in industrial equipment, automotive electrical applications, DC-DC converters, and high-efficiency motor controls. It supports fast switching speeds critical for switch mode power supplies and high-frequency converters with low switching losses.
Supports continuous drain current up to 64 A for demanding power applications. Enhancement mode operation ensures superior switching performance and efficiency. Low Rds(on) of 14 mΩ reduces conduction losses. Wide temperature range (-55°C to +175°C) supports diverse operating conditions.
Standard TO-220 3-pin package for easy PCB mounting and heat dissipation. Maximum power dissipation of 130 W with proper cooling. Gate-source voltage tolerance of ±20 V for robust control. Fully avalanche rated for transient voltage protection.
Ideal for industrial automation, automotive systems, power converters, and motor control. Typical gate charge of 81 nC enables efficient high-speed switching.
Explore the full range of Infineon Power MOSFETs and other semiconductor products in the Electronics & Electricals category at EnvMart for reliable and efficient electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 64 A, making it suitable for demanding power applications.
This MOSFET has a maximum drain-source voltage rating of 55 V.
It comes in a TO-220 package type, which is a standard 3-pin through-hole format suitable for PCB mounting.
The low drain-source resistance (Rds(on)) is 14 mΩ, which helps to minimize conduction losses during operation.
The operating temperature range for this MOSFET is from -55°C to +175°C, allowing reliable performance in extreme environments.
The maximum power dissipation rating is 130 W, provided that adequate cooling is applied during operation.
The typical gate charge (Qg) at Vgs is 81 nC, enabling efficient high-speed switching capabilities.
This model features an N-channel type, which is commonly used for enhancing switching performance in various applications.
The maximum gate-source voltage tolerance is ±20 V, ensuring robust control during operation.
The dimensions of this MOSFET are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
It is ideal for applications in industrial automation, automotive systems, power management, and motor controls.
The enhancement mode operation allows for superior switching performance and efficiency, making it suitable for various electronic applications.
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