Nexperia Digital PNP Transistor -100 mA, -50 V, 3-Pin UMT PDTA143ZU,115

Nexperia PDTA143ZU,115 digital PNP transistor is designed for surface mount applications requiring a compact 3-pin UMT package. This device supports a maximum DC collector current of -100 mA and can withstand collector-emitter voltages up to -50 V, making it suitable for low power switching and amplification tasks in circuit designs.

This transistor integrates one or two bias resistors internally, often referred to as digital or bias resistor transistors, facilitating direct interfacing with digital logic without external resistor networks. This design feature simplifies circuitry and saves board space.

Power dissipation rating of 200 mW allows moderate load handling capabilities, useful in signal conditioning and control applications. Its operating temperature range from -65°C to 150°C supports reliable performance in industrial or industrial-grade environments.

The device minimum DC current gain (hFE) of 100 ensures effective amplification with stable operation. Voltage tolerances include collector-base voltage up to -50 V and emitter-base voltage up to 10 V, allowing robustness in switching circuits.

Compact physical dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height make this transistor excellent for high-density electronic assemblies where board space is critical.

Manufactured in Malaysia, this transistor has no automotive standard certifications but complies with industry quality specifications. It is suitable for various industrial, consumer electronics, and communication devices requiring PNP transistor functionality with integrated bias resistors.

This transistor includes an integrated resistor enabling digital driving from common logic levels. Maximum power dissipation is rated at 200 mW. Device features surface mount technology with a compact 3-pin UMT package. Operating temperature range spans from -65°C to 150°C for varied environmental conditions.

Minimum DC current gain (hFE) is 100, ensuring adequate amplification performance. Supports robust voltage ratings: collector-base -50 V and emitter-base 10 V. Physical dimensions are 2.2 mm length, 1.35 mm width, and 1 mm height for space-efficient applications.

Manufactured in Malaysia, adhering to quality standards without automotive certification. Explore the comprehensive portfolio of Nexperia semiconductor devices and Digital Transistors on EnvMart for advanced industrial and electronic applications.