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Nexperia PNP Transistor, 4 A DC Collector Current, 80 V Collector Emitter Voltage, 2.5 W Power Dissipation PBSS5480X,135

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.5mm
Length 4.6mm
Model PBSS5480X,135
Width 2.5mm
Mount Type Surface
Series PBSS5480X
Maximum Operating Temperature 150°C
Package Type UPAK
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 4
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 80
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 2.5W
Maximum DC Collector Current Idc -4A
Transistor Configuration Single
Maximum Transition Frequency ft 125MHz

Key Features

  • Transistor supports maximum 4 A DC collector current.
  • Collector-emitter voltage rated at 80 V.
  • Maximum power dissipation is 2.5 W for efficient heat handling.
  • Minimum DC current gain (hFE) is 80 for effective amplification.
  • Low saturation voltage suitable for switching applications.
  • Operation temperature range spans -65°C to 150°C.
  • Compact 4-pin UPAK surface mount package design.
  • Maximum transition frequency of 125 MHz for high-speed circuits.

Product Description

Nexperia PBSS5480X,135 PNP Transistor is a high-quality bipolar transistor suitable for industrial and electronic applications requiring robust power and switching capabilities. This device features a maximum DC collector current of 4 A and collector-emitter voltage rating of 80 V, making it suitable for switching circuits and general amplification.

The transistor is supplied in a compact 4-pin UPAK surface mount package, enabling space-saving PCB designs and efficient thermal management with a max power dissipation of 2.5 W. Operating temperature ranges from -65°C to 150°C, ensuring durable performance under varying environmental conditions.

With a high minimum current gain of 80 and a transition frequency up to 125 MHz, this transistor enables fast switching and efficient digital or analog circuit implementations. 4 A maximum DC collector current. 80 V maximum collector-emitter voltage.

2.5 W power dissipation for reduced heat generation. Low saturation voltage for improved switching efficiency. Surface mount 4-pin UPAK package for compact circuits. Operating temperature from -65°C to 150°C. Compliance with RoHS environmental standards.

125 MHz maximum transition frequency.

This transistor is ideal for use in industrial electronics, digital circuits, signal processing, and switching applications requiring reliable high-current, low-voltage drop components.

EnvMart offers this high-performance bipolar PNP transistor by Nexperia, model PBSS5480X,135, well-suited for advanced electronic designs and manufacturing needs.

Explore more products in our Bipolar Transistors category.

Nexperia PNP Transistor, 4 A DC Collector Current, 80 V Collector Emitter Voltage, 2.5 W Power Dissipation PBSS5480X,135
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