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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 7A 600V Enhancement 3-Pin TO-220 STP9NK60Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP9NK60Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 950mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Feature enhanced switching with a channel mode enhancement technology.
- Maximum drain-source voltage of 600 volts for high voltage applications.
- Continuous drain current rating of 7 amperes to handle moderate loads.
- Through hole mount type in TO-220 package for easy installation on PCBs.
- Low on-resistance of 950 milliohms to improve efficiency and reduce losses.
- Can operate over a temperature range from -55°C to 150°C ensuring durability.
- Typical gate charge is 38 nanocoulombs at Vgs providing efficient gate drive.
- 3-pin configuration suitable for multiple circuit designs.
Product Description
STMicroelectronics STP9NK60Z MDmesh SuperMESH N-Channel MOSFET is a precision semiconductor device optimized for power switching and amplification in electronic circuits. Rated for a maximum continuous drain current of 7 amperes and a maximum drain-source voltage of 600 volts, this device ensures robust performance in demanding industrial and commercial applications.
The device features a through-hole mount type with a TO-220 package that facilitates heat dissipation and easy PCB integration. The MDmesh SuperMESH series is known for low on-resistance of 950 milliohms, which enhances energy efficiency and reduces conduction losses.
Operating temperature range spans from -55°C to 150°C, allowing the MOSFET to function reliably in harsh environments including industrial controls, power supplies, and motor drives. The typical gate charge of 38 nanocoulombs at gate-source voltage ensures fast switching and reduced drive power.
This 3-pin device supports enhancement mode operation, making it suitable for use in a broad range of power management and switching applications. The compact physical dimensions of 10.4mm length, 9.15mm height, and 4.6mm width contribute to versatile design implementations.
Although this MOSFET does not have automotive standard certification, it is ideal for industrial electronics, laboratory equipment, power management systems, HVAC controls, and manufacturing automation solutions.
Feature enhanced switching with a channel mode enhancement technology. Maximum drain-source voltage of 600 volts for high voltage applications. Continuous drain current rating of 7 amperes to handle moderate loads. Through hole mount type in TO-220 package for easy installation on PCBs.
Low on-resistance of 950 milliohms to improve efficiency and reduce losses. Can operate over a temperature range from -55°C to 150°C ensuring durability. Typical gate charge is 38 nanocoulombs at Vgs providing efficient gate drive.
3-pin configuration suitable for multiple circuit designs. Forward voltage drop of 1.6 volts for power optimization. Compact dimensions with 10.4mm length, 9.15mm height, and 4.6mm width. Ideal for industrial, laboratory, construction, manufacturing, and HVAC applications.
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Frequently Asked Questions
The maximum drain-source voltage for the STMicroelectronics STP9NK60Z MOSFET is 600 volts, making it suitable for high voltage applications.
This MOSFET has a continuous drain current rating of 7 amperes, allowing it to handle moderate loads effectively.
The STP9NK60Z is packaged in a TO-220 type, which is a through-hole mount design facilitating easy installation on PCBs.
The on-resistance of this MOSFET is 950 milliohms, which helps improve efficiency and reduce conduction losses.
It can operate over a temperature range from -55°C to 150°C, ensuring reliability in various environmental conditions.
The typical gate charge is 38 nanocoulombs at a gate-source voltage, which supports efficient gate drive.
This model features a 3-pin configuration, making it suitable for various circuit designs.
The forward voltage drop for this MOSFET is 1.6 volts, which aids in power optimization during operation.
This device is ideal for use in industrial electronics, laboratory equipment, power management systems, HVAC controls, and manufacturing automation.
The maximum power dissipation for the STP9NK60Z is 125 watts, allowing it to handle significant power loads.
The channel type of this device is N-channel, which is commonly used for enhancement mode operation in various applications.
The dimensions of the STMicroelectronics STP9NK60Z are 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width.
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