STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 500 V 2.3 A 45 W TO-252 STD3NK50ZT4

STMicroelectronics STD3NK50ZT4 is an N-Channel MDmesh™ SuperMESH™ MOSFET designed for high efficiency and reliable operation in electronic circuits.

With a maximum continuous drain current of 2.3 A and a drain-source voltage rating of 500 V, this MOSFET is ideal for switching applications requiring robust voltage and current handling capabilities.

The device features a 3-pin TO-252 surface mount package aiding in compact PCB designs and effective thermal dissipation. It supports a maximum power dissipation of 45 W, ensuring excellent performance under load.

Designed using MDmesh SuperMESH technology, the transistor offers a low drain-source on-resistance of 3.3 Ω, which reduces conduction losses and improves overall efficiency.

It operates reliably across a wide temperature range from -55°C to 150°C and has a typical gate charge of 11 nC at Vgs, enabling faster switching and energy savings in power management applications.

The maximum gate-source voltage is ±30 V, which provides a large control voltage margin for diverse circuit designs. MDmesh SuperMESH technology enables efficient switching. Compact TO-252 surface mount package. 45 W maximum power dissipation for robust application.

Low Rds(on) of 3.3 Ω reduces energy loss. Wide temperature range from -55°C to 150°C. Typical gate charge of 11 nC allows fast switching. Gate-source voltage rating of ±30 V for control flexibility. Small form factor with dimensions 6.6 mm x 6.2 mm x 2.4 mm.

This MOSFET is suited for industrial, electronic power conversion, consumer electronics, and general switching applications where reliable and efficient transistor operation is required.

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