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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 600 V 4 A 70 W TO-220 STP4NK60Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP4NK60Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 18.8nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET features a TO-220 package with 3 pins suitable for through-hole mounting.
- It operates in enhancement mode with a maximum power dissipation of 70 W.
- The device includes a maximum drain-source resistance of 2 ohms for efficient conduction.
- Operating temperature ranges from -55°C to 150°C ensuring adaptability in harsh environments.
- Maximum gate-source voltage is ±30 V, supporting versatile gate drive conditions.
- Typical gate charge at Vgs is 18.8 nC enabling fast switching.
- Physical dimensions are 10.4 mm length, 9.15 mm height, and 4.6 mm width for compact board design.
Product Description
STMicroelectronics STP4NK60Z is a robust MDmesh SuperMESH N-Channel MOSFET designed for power switching applications with a maximum drain current of 4 A and a drain-source voltage of 600 V.
This discrete semiconductor device features a TO-220 package type with through-hole mounting style, providing ease of integration on PCBs in industrial and electronic equipment.
The enhancement mode channel operates reliably with a maximum power dissipation of 70 W and a low maximum Rds(on) of 2 ohms, delivering efficient power conversion and minimal heat generation.
It supports a broad temperature range from -55°C minimum to 150°C maximum operating temperature, making it suitable for demanding environments such as power supplies, motor controls, and industrial automation.
The MOSFET includes a typical gate charge of 18.8 nC at gate-source voltage, allowing fast switching characteristics necessary for high-frequency operations. Physical dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width help in designing compact and reliable electronic assemblies.
This device does not carry specific automotive or industry standard certifications but is compliant with RoHS requirements. This MOSFET features a TO-220 package with 3 pins suitable for through-hole mounting. It operates in enhancement mode with a maximum power dissipation of 70 W.
The device includes a maximum drain-source resistance of 2 ohms for efficient conduction. Operating temperature ranges from -55°C to 150°C ensuring adaptability in harsh environments. Maximum gate-source voltage is ±30 V, supporting versatile gate drive conditions.
Typical gate charge at Vgs is 18.8 nC enabling fast switching. Physical dimensions are 10.4 mm length, 9.15 mm height, and 4.6 mm width for compact board design. Ideal for use in industrial power electronics, electronic component assemblies, and semiconductor applications requiring reliable N-channel MOSFETs.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 600 V, making it suitable for high-voltage applications.
This MOSFET can handle a maximum continuous drain current of 4 A, which is essential for various power switching applications.
The maximum power dissipation for this unit is 70 W, allowing it to operate efficiently in power applications.
It features a TO-220 package type with a through-hole mounting style, facilitating easy integration into circuit boards.
The maximum gate-source voltage for this model is ±30 V, which supports versatile gate drive conditions.
The physical dimensions are 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width, allowing for compact board design.
The typical gate charge at gate-source voltage (Vgs) is 18.8 nC, enabling fast switching characteristics.
It operates within a temperature range from -55°C to 150°C, ensuring adaptability in harsh environments.
The maximum drain-source resistance (Rds(on)) is 2 ohms, which contributes to efficient conduction.
This model uses an enhancement mode N-channel design, suitable for various power switching applications.
This device is compliant with RoHS requirements, ensuring it meets environmental regulations.
It is ideal for use in power supplies, motor controls, and industrial automation, where reliable switching is required.
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