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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 8A 900V Enhancement Mode 3-Pin TO-247 STW9NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW9NK90Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 1.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
| N channel MOSFET,STW8NC90Z 7.6A 900VBrand | STMicroelectronics |
Key Features
- Enhancement mode N-Channel MOSFET for reliable switching.
- Maximum continuous drain current of 8 amperes for robust performance.
- High drain-source voltage rated at 900 volts ensures durability under high voltage.
- 3-pin TO-247 through-hole package for easy mounting.
- Maximum power dissipation of 160 watts supports high power applications.
- Wide operating temperature range from -55°C to 150°C.
- Typical gate charge of 72nC at Vgs enabling efficient gate control.
- Forward voltage of 1.6 volts for effective conduction.
Product Description
STMicroelectronics STW9NK90Z is an N-Channel MDmesh SuperMESH enhancement mode MOSFET designed for power semiconductor applications. It features a maximum continuous drain current of 8 amperes and a maximum drain-source voltage of 900 volts, making it suitable for industrial, power management, and electronic control systems requiring reliable high voltage switching.
The device is packaged in a 3-pin TO-247 through-hole form factor, ensuring easy mounting and heat dissipation. With a maximum power dissipation rating of 160 watts, it handles substantial power loads typical in industrial and automotive electronics.
Operating over a temperature range of -55°C to 150°C, this MOSFET is suited for demanding environments. Its typical gate charge of 72 nanocoulombs at Vgs ensures efficient gate drive requirements, and a forward voltage of 1.6 volts allows for low conduction losses.
The gate-source voltage range of -30V to +30V protects the device from transient voltages, enhancing reliability. Precise dimensions of 20.15mm height, 15.75mm length, and 5.15mm width aid in system design and layout considerations.
Enhancement mode N-Channel for power electronic control. 8A maximum continuous drain current for robust handling. 900V drain-source voltage rating for high voltage tolerance. TO-247 3-pin package for easy installation. 160W power dissipation capability supports demanding loads.
Wide temperature operation from -55°C to 150°C. Efficient gate driving with 72nC typical gate charge. Low forward voltage drop of 1.6V for conduction efficiency. Protective gate-source voltage range of -30 to +30 volts. Compact dimensions support versatile mounting options.
This MOSFET is ideal for use in industrial electronics, power supplies, automotive electronics, and other applications requiring efficient power switching and high voltage capability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 amperes.
It has a maximum drain-source voltage rating of 900 volts, suitable for high voltage applications.
This model is packaged in a 3-pin TO-247 through-hole configuration, which facilitates easy mounting.
The maximum power dissipation for this MOSFET is rated at 160 watts, allowing it to handle substantial power loads.
It operates over a wide temperature range from -55°C to 150°C, making it suitable for demanding environments.
The typical gate charge at Vgs for this model is 72 nanocoulombs, ensuring efficient gate control.
The forward voltage drop is 1.6 volts, which contributes to low conduction losses.
The maximum gate-source voltage range is -30V to +30V, providing protection from transient voltages.
The dimensions are 20.15mm in height, 15.75mm in length, and 5.15mm in width.
This model features an N-channel configuration, which is typical for enhancement mode MOSFETs.
It belongs to the MDmesh and SuperMESH series, designed for power semiconductor applications.
This MOSFET is suitable for applications in industrial electronics, power supplies, and automotive electronics requiring efficient power switching and high voltage capability.
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