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Vishay E N-Channel Power MOSFET 19 A 500 V Enhancement 3-Pin TO-247AC SIHG20N50E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | SIHG20N50E-GE3 |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 184mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 179W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Operates with a continuous drain current of 19 A for substantial load handling.
- Features a maximum drain-source voltage rating of 500 V for demanding circuits.
- Utilizes a TO-247AC through-hole package with 3 pins, suitable for conventional mounting.
- Max power dissipation of 179W allows high-power applications.
- Typical gate charge of 46nC reduces switching control energy requirements.
- Maximum gate-source voltage rating is ±30 V compatible with standard gate drivers.
- Operating temperature range from -55°C to 150°C supports harsh environmental conditions.
- Maximum drain-source resistance is 184 milliohms minimizing conduction losses.
Product Description
Vishay SIHG20N50E-GE3 is an E N-Channel Power MOSFET manufactured for robust high-voltage switching and power conversion tasks. Rated for a maximum continuous drain current of 19 A and a maximum drain-source voltage of 500 V, this device supports demanding industrial and electronic configurations.
The device is housed in a TO-247AC through-hole package with 3 pins, facilitating standard manual or wave soldering techniques. It provides a maximum power dissipation capacity of 179 W, enabling operation in high power stages.
This MOSFET features a low maximum RDS(on) of 184 milliohms which minimizes conduction losses and improves efficiency. The typical gate charge at Vgs is 46nC, optimizing switching energy consumption. It supports a gate-source voltage rating of ±30 V, allowing for standard gate drive voltage design.
Its operating temperature range from -55°C to 150°C ensures reliability even under elevated thermal conditions, making it suitable for industrial power supplies, inverters, motor-drive applications, and prototype or repair work involving legacy through-hole assemblies.
High-voltage 500 V drain-source rating for power electronics. 19 A continuous current for substantial load handling capability. Through-hole TO-247AC package for versatile mounting. 179 W power dissipation rating suitable for demanding applications.
Low conduction loss with 184mΩ maximum Rds(on). Efficient switching with 46nC typical gate charge. Wide operating temperature range from -55°C to 150°C. RoHS compliant for environmental regulations. This product serves in numerous industrial contexts including power supplies, converters, and motor drives in electronic manufacturing and maintenance environments.
Explore more power semiconductor components and Power MOSFETs in the Vishay series at EnvMart for reliable and efficient electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19 A.
It has a maximum drain-source voltage rating of 500 V, making it suitable for high-voltage applications.
This MOSFET utilizes a TO-247AC through-hole package with 3 pins, allowing for standard mounting techniques.
The maximum power dissipation capacity is 179 W, enabling its use in high-power applications.
The typical gate charge at Vgs is 46 nC, which helps in reducing switching control energy requirements.
The maximum gate-source voltage rating is ±30 V, compatible with standard gate drivers.
It operates within a temperature range of -55°C to 150°C, suitable for harsh environmental conditions.
The maximum drain-source resistance is 184 milliohms, which minimizes conduction losses.
The dimensions of this model are 20.82 mm in height, 15.87 mm in length, and 5.31 mm in width.
This model is RoHS compliant, adhering to environmental regulations.
This MOSFET is suitable for applications in power supplies, inverters, and motor drives.
This model features an N-channel type, which is typical for enhancement mode MOSFETs.
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