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DiodesZetex N-Channel MOSFET 380 mA 60 V Enhancement Mode 3-Pin SOT-23 2N7002K-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model 2N7002K-7
Width 1.4mm
Mount Type Surface
Series 2N7002
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 380mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 3Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 540mW
Typical Gate Charge Qg @ Vgs 0.3nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • The device operates in enhancement mode with a channel type of N.
  • It features a maximum drain-source resistance (Rds) of 3 ohms.
  • Maximum power dissipation is rated at 540 milliwatts.
  • Operating temperature range from -55°C to +150°C ensures reliability under harsh conditions.
  • The typical gate charge at Vgs is only 0.3 nanocoulombs, providing efficient switching.
  • Rated maximum gate-source voltage ranges from -20 V to +20 V for robust operation.
  • Forward voltage drop is -1.2 volts, aiding in low-power dissipation.
  • Small dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height allow space-saving PCB layouts.

Product Description

DiodesZetex 2N7002K-7 is a high-quality N-Channel MOSFET designed for efficient switching and amplification applications. This device supports a continuous drain current of 380 mA and withstands up to 60 V across drain to source terminals, making it suitable for low-power electronic circuits.

Featuring enhancement mode operation, the MOSFET has a maximum drain-source resistance of 3 ohms, enabling low conduction losses. It offers a maximum power dissipation of 540 milliwatts, with robust operation across a temperature range from -55°C up to 150°C. The device’s gate characteristics include a typical gate charge of 0.3 nC at gate-source voltage and a maximum gate-source voltage rating from -20 V to +20 V, ensuring precise gate drive and protection.

The compact SOT-23 3-pin surface mount package with dimensions 3 mm by 1.4 mm by 1.1 mm suits dense PCB designs in consumer, automotive, and industrial applications. With compliance to the AEC-Q101 automotive standard, this MOSFET is verified for durability and performance in demanding environments.

Common uses for the 2N7002K-7 include load switching, signal amplification, and other switching operations in power management, industrial controls, and automotive electronic systems. Its small form factor and efficient electrical performance make it a versatile choice for modern electronic designs.

The device operates in enhancement mode with a channel type of N. It features a maximum drain-source resistance (Rds) of 3 ohms. Maximum power dissipation is rated at 540 milliwatts. Operating temperature range from -55°C to +150°C ensures reliability under harsh conditions.

The typical gate charge at Vgs is only 0.3 nanocoulombs, providing efficient switching. Rated maximum gate-source voltage ranges from -20 V to +20 V for robust operation. Forward voltage drop is -1.2 volts, aiding in low-power dissipation.

Small dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height allow space-saving PCB layouts. Automotive grade AEC-Q101 certification attests to high quality and reliability. Surface mount device package simplifies automated assembly.

This DiodesZetex N-Channel MOSFET is ideal for industrial, automotive, laboratory, and consumer electronics applications requiring reliable, low-voltage switching components. Explore more electronics components and semiconductor devices in EnvMart’s extensive catalog for your design and manufacturing needs.

DiodesZetex N-Channel MOSFET 380 mA 60 V Enhancement Mode 3-Pin SOT-23 2N7002K-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 380 mA.

It can withstand a maximum drain-source voltage of 60 V.

The typical gate charge at gate-source voltage (Vgs) is 0.3 nanocoulombs.

The operating temperature range is from -55°C to +150°C.

The maximum power dissipation is rated at 540 milliwatts.

The dimensions of the SOT-23 package are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The rated maximum gate-source voltage ranges from -20 V to +20 V.

The maximum drain-source resistance (Rds) is 3 ohms.

This model complies with the AEC-Q101 automotive standard.

It features an N-channel type for enhancement mode operation.

This MOSFET is suitable for load switching, signal amplification, and other switching operations in power management and automotive electronic systems.

The forward voltage drop is -1.2 volts, which aids in low-power dissipation.

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