Infineon CoolMOS C6 N-Channel MOSFET, 83 A, 700 V Enhancement, 3-Pin TO-247 IPW65R037C6FKSA1

Infineon IPW65R037C6FKSA1 is a CoolMOS C6 series N-Channel MOSFET designed for high power switching applications. With a maximum continuous drain current of 83 A and drain-source voltage rating of 700 V, this device supports demanding industrial and electronic designs.

The enhancement mode channel with a low drain-source resistance of 37 milliohms provides excellent conduction efficiency, reducing power loss during operation. It dissipates up to 500 W power and maintains stable operation across a wide temperature range from -55°C to 150°C, suitable for robust environments.

Its typical gate charge of 330 nC and forward voltage of 850 mV make it an efficient component for power management circuits. Packaged in a 3-pin TO-247 case, it offers through-hole mount compatibility for easy integration into various electronic assemblies.

Ideal use cases include power supply circuits, motor controllers, industrial automation, and other high-efficiency power switching applications in industrial, commercial, and manufacturing environments.

Supports maximum continuous drain current of 83 A. Rated for maximum drain-source voltage of 700 V. Enhancement mode channel configuration. Low drain-source resistance of 37 mΩ reduces losses. Maximum power dissipation of 500 W.

Operating temperature range from -55°C to 150°C. Typical gate charge 330 nC at 30 V gate-source voltage. Forward voltage drop of approximately 850 mV. 3-pin TO-247 package suitable for through-hole mounting. Compact dimensions: 16.13 mm × 21.1 mm × 5.21 mm (L×H×W).

Explore more high-performance semiconductor components from Infineon at EnvMart for your electronic and industrial system requirements.