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onsemi Silicon Junction Switching Diode, 1 A, 50 V, Through Hole, 2-Pin DO-41 1N4001G

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin China
Diameter 2.7mm
Brand onsemi
Height 5.2mm
Length 54.9mm
Model 1N4001G
Finish All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Gross Weight 0.4 Gram
Width 2.7mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Case Epoxy, Molded
Package Type DO-41
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Polarity Cathode Indicated by Polarity Band
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.1V
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 50V
Lead Temperature for Soldering Purposes 260°C Max for 10 Seconds
ON Semi 50V 1A, Silicon Junction Diode, 2-Pin DO-41 1N4001GBrand ON Semiconductor

Key Features

  • Single silicon junction diode with a 1 amp forward current rating.
  • 2-pin DO-41 axial lead package suitable for through-hole mounting.
  • Maximum peak reverse repetitive voltage of 50 volts for reliable operation.
  • Maximum forward voltage drop of 1.1 volts ensuring efficient conduction.
  • Wide operating temperature range from -65°C to 175°C for varied conditions.
  • Epoxy molded case with corrosion-resistant external surfaces.
  • Terminal leads are readily solderable at 260°C max for 10 seconds.
  • Cathode indicated by polarity band for easy identification.

Product Description

onsemi 1N4001G Silicon Junction Switching Diode is a standard recovery rectifier designed for general purpose low power switching applications. It features a 2-pin DO-41 axial lead package and supports a maximum forward current of 1 ampere with a peak reverse voltage of 50 volts.

This diode operates efficiently with a maximum forward voltage of 1.1 volts and can withstand surge currents up to 30 amperes for brief periods, making it suitable for demanding transient conditions.

The device is encapsulated in an epoxy molded case providing excellent protection against corrosion and environmental influences. Its external surfaces are corrosion-resistant and the terminal leads are readily solderable, allowing ease of assembly on through-hole printed circuit boards.

The diode has a wide operating temperature range from -65°C to 175°C, ensuring reliability in harsh industrial and commercial environments. The cathode end is marked by a polarity band, facilitating correct installation.

Common applications include use as free wheeling diodes in power inverters, polarity protection to safeguard circuits from reverse voltage, and in high frequency inverter circuits.

This diode configuration is a single silicon junction type suitable for general Discrete Semiconductor switching applications. The DO-41 package form factor allows straightforward integration into through-hole PCBs. Its compact dimensions (length 54.9mm, diameter 2.7mm) and lightweight (0.4 gram) make it suitable for space-constrained designs.

The device is compliant with standard requirements but does not hold specific approvals or automotive certifications. It is manufactured in China under onsemi brand, ensuring quality and consistency. Explore more semiconductor components and switching diodes from onsemi available at EnvMart for your electronic and industrial projects.

onsemi Silicon Junction Switching Diode, 1 A, 50 V, Through Hole, 2-Pin DO-41 1N4001G
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Frequently Asked Questions

The maximum forward current rating of this diode is 1 ampere.

It has a maximum peak reverse repetitive voltage of 50 volts.

The maximum forward voltage drop is 1.1 volts, ensuring efficient conduction.

This diode operates within a wide temperature range from -65°C to 175°C.

It comes in a 2-pin DO-41 axial lead package suitable for through-hole mounting.

The diode can withstand surge currents up to 30 amperes for brief periods.

The cathode end is indicated by a polarity band for easy identification during installation.

This diode has a gross weight of 0.4 grams.

The diode is encapsulated in an epoxy molded case with corrosion-resistant external surfaces.

Common applications include use as free wheeling diodes in power inverters and for polarity protection in circuits.

The terminal leads can be soldered at a maximum temperature of 260°C for up to 10 seconds.

This diode is manufactured in China under the onsemi brand.

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