Infineon ISP Type P-Channel MOSFET 2.8A 60V Enhancement Mode 3-Pin SOT-223 ISP12DP06NMXTSA1

The Infineon ISP12DP06NMXTSA1 is a P-Channel MOSFET designed for efficient power management applications. With a maximum continuous drain current of 2.8 amperes and a maximum drain-source voltage rating of 60 volts, this device is ideal for switching and amplification tasks in electronic circuits.

Constructed in a compact 3-pin SOT-223 surface mount package, it offers a low maximum drain-source resistance of 1.7 milliohm, which minimizes power loss and heat generation during operation. The device operates reliably across a wide temperature range from -55°C up to 175°C, making it suitable for demanding industrial, automotive, and consumer electronics environments.

This MOSFET features an enhancement mode channel with a maximum gate-source voltage rating of 20 volts, facilitating fast switching and easy interface with control circuitry such as microcontrollers. Its maximum power dissipation rating of 81 watts ensures robust handling of transient loads and continuous operation under elevated power demands.

The device complies with RoHS directives and the automotive AEC-Q101 standard, ensuring environmental safety and automotive-grade reliability. Typical applications include power switching in automotive electronics, industrial control systems, and general-purpose power management in consumer devices.

Type P channel enhancement mode for reliable switching. Low drain-source resistance for efficient conduction. Wide operating temperature range from -55°C to 175°C. High power dissipation up to 81W for robust performance.

Compact 3-pin SOT-223 package suitable for surface mount technology. Compliant with RoHS and automotive AEC-Q101 standards.

This Infineon MOSFET delivers reliable performance for power management in industrial, automotive, and consumer electronics applications. For more selection of high-quality MOSFET components, continue browsing our Semiconductor and Discrete Semiconductors categories on EnvMart.