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Infineon N-Channel MOSFET 84 A 40 V TO-220 Surface Mount 3-Pin IPA80R280P7XKSA1

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Infineon N-Channel MOSFET 84 A 40 V TO-220 Surface Mount 3-Pin IPA80R280P7XKSA1

Name: Infineon N-Channel MOSFET 84 A 40 V TO-220 Surface Mount 3-Pin IPA80R280P7XKSA1
Brand: Infineon
SKU: 178356
Price: 4.67 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPA80R280P7XKSA1
Mount Type	Surface
Series	IPA
Maximum Operating Temperature	+150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	84A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	2.9mΩ
Channel Mode	P
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	900mV

Key Features

Very low on-resistance of 2.9 milliohms reduces conduction losses effectively.
Maximum power dissipation rating of 81 watts supports sustained heavy thermal loads.
Typical gate charge of 80 nanocoulombs allows efficient switching control.
Operates safely over a wide temperature range from -55° C to +150° C.
Maximum gate-source voltage tolerance up to 20 volts ensures reliable operation.
Forward voltage of 0.9 volts minimizes conduction voltage drop.
Surface mount TO-220 package facilitates easy mounting to heatsinks or PCBs.
Ideal for use in power supplies, motor drives, DC-DC converters, and battery management systems.

Product Description

Infineon IPA80R280P7XKSA1 is an N-Channel MOSFET transistor engineered for power switching with a maximum continuous drain current of 84 amperes and a drain-source voltage rating of 40 volts. It features a low on-resistance of 2.9 milliohms which effectively reduces conduction losses and supports efficient high-current operation.

This device has a maximum power dissipation of 81 watts, enabling it to handle substantial thermal loads during demanding applications. The MOSFET exhibits a typical gate charge of 80 nanocoulombs, which allows predictable energy management in switching circuits.

Designed to operate in environments ranging from -55° C to +150° C, it maintains reliable performance across wide temperature extremes. The maximum gate-source voltage is rated at 20 volts, offering protection for safe operation. The forward voltage drop is minimized to 0.9 volts, reducing power loss during conduction.

Packaged in a 3-pin TO-220 surface mount format, this MOSFET is suited for mounting on heatsinks or PCBs, facilitating thermal management. Its channel mode is P with an N-type channel construction, making it ideal for power stage switching.

Very low conduction losses due to 2.9 milliohm on-resistance. High current handling with 84 ampere continuous drain current. Thermal endurance via 81 watt power dissipation capability. Efficient switching enabled by 80 nanocoulombs gate charge.

Wide operating temperature from -55° C to +150° C. Safe operation with 20 volts maximum gate-source voltage. Minimal voltage drop with 0.9 volt forward voltage. RoHS compliant for environmental safety. Suitable for power supplies, motor drives, DC-DC converters, and battery management.

This MOSFET finds application in industrial, automotive, and commercial electronics where efficient power switching and thermal management are critical. Its robust design supports tough environments and continuous high-performance operation.

Discover more advanced semiconductor components and MOSFET solutions in the Electronics & Electricals category at EnvMart.