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Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN Surface Mount IQE065N10NM5CGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE065N10NM5CGATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 730mV |
Key Features
- Offers a maximum continuous drain current of 253 amperes for high power applications.
- Operates at a maximum drain-source voltage of 30 volts ensuring versatility in various circuits.
- Features a low maximum drain-source resistance of 0.85 milliohms for efficient switching.
- Capable of handling a maximum power dissipation of 81 watts enhancing thermal performance.
- Designed with surface mount technology in an 8-pin PQFN package for compact PCB integration.
- Typical gate charge of 80 nanocoulombs at 8 volts gate-source voltage helps reduce switching losses.
- Supports wide operating temperature range from -55°C to 150°C for robust industrial use.
- Complies with RoHS and automotive standard AEC-Q101 for quality and safety assurance.
Product Description
Infineon IQE065N10NM5CGATMA1 is an N-Channel MOSFET designed for high-performance electronic applications requiring efficient power switching and thermal management. This device handles a maximum continuous drain current of 253 A at a maximum drain-source voltage of 30 V, making it suitable for demanding industrial, automotive, and power electronics uses.
Housed in a compact 8-pin PQFN surface-mount package measuring 3.3 mm in length, it enables higher power density and improved layout options on printed circuit boards. The MOSFET boasts a low maximum drain-source resistance (Rds(on)) of 0.85 milliohms, which helps minimize conduction losses and improve energy efficiency in switching circuits.
With a typical gate charge of 80 nC at a gate-source voltage of 8 V, the device offers reduced switching losses, contributing to overall system efficiency. It supports operation within a broad temperature range from -55°C to 150°C, making it reliable for automotive and industrial environments.
The device is RoHS compliant and meets the stringent automotive standard AEC-Q101 ensuring quality and safety for automotive electronics. Maximum continuous drain current: 253 A. Maximum drain-source voltage: 30 V. Maximum drain-source resistance: 0.85 mΩ.
Maximum power dissipation: 81 W. Package type: 8-Pin PQFN surface mount. Typical gate charge: 80 nC @ 8 V. Operating temperature range: -55°C to 150°C. Compliance: RoHS and AEC-Q101 automotive standard.
This MOSFET is ideal for applications in power management, industrial automation, and automotive electronics requiring high reliability and efficiency. It provides improved PCB losses and supports high power density designs enabling energy savings and reducing active cooling requirements.
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Frequently Asked Questions
The maximum continuous drain current is 253 amperes, making it suitable for high power applications.
This model operates at a maximum drain-source voltage of 30 volts.
The maximum power dissipation is 81 watts, enhancing its thermal performance.
It is housed in an 8-pin PQFN surface mount package, measuring 3.3 mm in length.
The typical gate charge is 80 nanocoulombs at a gate-source voltage of 8 volts, which helps reduce switching losses.
The maximum drain-source resistance is 0.85 milliohms, which helps minimize conduction losses.
It supports a wide operating temperature range from -55°C to 150°C, suitable for robust industrial use.
It complies with the automotive standard AEC-Q101, ensuring quality and safety for automotive applications.
Yes, this model is RoHS compliant, which ensures it meets environmental standards.
The maximum gate-source voltage is 16 volts.
This MOSFET is ideal for applications in power management, industrial automation, and automotive electronics requiring high reliability and efficiency.
The device is housed in a compact 8-pin PQFN package with a length of 3.3 mm.
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