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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISC010N06NM5 |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 150°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 330A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 2.4mΩ |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.1V |
Infineon ISC010N06NM5 is a high-performance N-Channel Power MOSFET designed for demanding power electronics applications. Featuring a continuous drain current of 330 A and a maximum drain-source voltage of 25 V, this device meets the needs of industrial, automotive, and commercial electronic systems. The 8-pin SuperSO8 5 x 6 surface mount package offers superior thermal resistance and reliability.
Optimized using Infineon's OptiMOS™ 5 technology, this MOSFET delivers low on-resistance of 2.4 mΩ at 25°C and maintains efficiency at elevated temperatures up to 150°C. With a typical gate charge of 80 nC, it offers improved switching speeds and reduced power loss in synchronous rectification and other high-frequency power conversion circuits.
This MOSFET is fully RoHS compliant and meets the stringent automotive standard AEC-Q101, making it suitable for automotive electronics and other reliability-critical applications. The device also exhibits low reverse recovery charge, which helps reduce voltage overshoot, minimizing the need for additional snubber circuits and lowering overall system cost.
Its surface mount SuperSO8 packaging ensures improved solder joint reliability due to enlarged source interconnections and enables high power density. The device can operate reliably in harsh conditions with a temperature range from -55°C to 150°C, supporting a wide range of industrial and commercial uses including power supply design, motor drives, and energy management.
This MOSFET features a low on-resistance of 2.4 mΩ for efficient power handling. Maximum power dissipation is rated at 171 W, suitable for high current applications. Built for operation from -55°C up to 150°C ensuring reliability in harsh environments.
The device supports a maximum gate-source voltage of 30 V and a forward voltage of 1.1 V. Typical gate charge at Vgs is 80 nC, optimizing switching performance. Complies with RoHS standards and meets AEC-Q101 automotive qualification.
Its surface mount SuperSO8 5 x 6 package ensures high solder joint reliability and enhanced thermal resistance. Designed for low voltage, high current synchronous rectification applications with improved system efficiency.
This Infineon ISC Power MOSFET is ideal for use in industrial power converters, automotive electronic subsystems, DC-DC converters, synchronous rectification, and PWM control circuits. Browse more industrial semiconductor components and Power MOSFET devices at EnvMart for broader power management solutions.
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