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Infineon ISC N-Channel MOSFET 330 A 25 V 8-Pin SuperSO8 5 x 6 ISC010N06NM5

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model ISC010N06NM5
Mount Type Surface
Series ISC
Maximum Operating Temperature 150°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 330A
Maximum Drain Source Voltage Vds 25V
Maximum Drain Source Resistance Rds 2.4mΩ
Maximum Power Dissipation Pd 171W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.1V

Key Features

  • This MOSFET features a low on-resistance of 2.4 mΩ for efficient power handling.
  • Maximum power dissipation is rated at 171 W, suitable for high current applications.
  • Built for operation from -55°C up to 150°C ensuring reliability in harsh environments.
  • The device supports a maximum gate-source voltage of 30 V and a forward voltage of 1.1 V.
  • Typical gate charge at Vgs is 80 nC, optimizing switching performance.
  • Complies with RoHS standards and meets AEC-Q101 automotive qualification.
  • Its surface mount SuperSO8 5 x 6 package ensures high solder joint reliability and enhanced thermal resistance.
  • Designed for low voltage, high current synchronous rectification applications with improved system efficiency.

Product Description

Infineon ISC010N06NM5 is a high-performance N-Channel Power MOSFET designed for demanding power electronics applications. Featuring a continuous drain current of 330 A and a maximum drain-source voltage of 25 V, this device meets the needs of industrial, automotive, and commercial electronic systems. The 8-pin SuperSO8 5 x 6 surface mount package offers superior thermal resistance and reliability.

Optimized using Infineon's OptiMOS™ 5 technology, this MOSFET delivers low on-resistance of 2.4 mΩ at 25°C and maintains efficiency at elevated temperatures up to 150°C. With a typical gate charge of 80 nC, it offers improved switching speeds and reduced power loss in synchronous rectification and other high-frequency power conversion circuits.

This MOSFET is fully RoHS compliant and meets the stringent automotive standard AEC-Q101, making it suitable for automotive electronics and other reliability-critical applications. The device also exhibits low reverse recovery charge, which helps reduce voltage overshoot, minimizing the need for additional snubber circuits and lowering overall system cost.

Its surface mount SuperSO8 packaging ensures improved solder joint reliability due to enlarged source interconnections and enables high power density. The device can operate reliably in harsh conditions with a temperature range from -55°C to 150°C, supporting a wide range of industrial and commercial uses including power supply design, motor drives, and energy management.

This MOSFET features a low on-resistance of 2.4 mΩ for efficient power handling. Maximum power dissipation is rated at 171 W, suitable for high current applications. Built for operation from -55°C up to 150°C ensuring reliability in harsh environments.

The device supports a maximum gate-source voltage of 30 V and a forward voltage of 1.1 V. Typical gate charge at Vgs is 80 nC, optimizing switching performance. Complies with RoHS standards and meets AEC-Q101 automotive qualification.

Its surface mount SuperSO8 5 x 6 package ensures high solder joint reliability and enhanced thermal resistance. Designed for low voltage, high current synchronous rectification applications with improved system efficiency.

This Infineon ISC Power MOSFET is ideal for use in industrial power converters, automotive electronic subsystems, DC-DC converters, synchronous rectification, and PWM control circuits. Browse more industrial semiconductor components and Power MOSFET devices at EnvMart for broader power management solutions.

Infineon ISC N-Channel MOSFET 330 A 25 V 8-Pin SuperSO8 5 x 6 ISC010N06NM5
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Frequently Asked Questions

The maximum continuous drain current of this model is 330 A.

This MOSFET supports a maximum drain-source voltage of 25 V.

It features a low on-resistance of 2.4 mΩ, which enhances its efficiency in power handling applications.

The ISC010N06NM5 can operate in temperatures ranging from -55°C to 150°C.

The typical gate charge at Vgs is 80 nC, optimizing its switching performance.

It comes in a SuperSO8 5 x 6 surface mount package, which provides enhanced thermal resistance and reliability.

The maximum power dissipation for this MOSFET is rated at 171 W, suitable for high current applications.

This device meets the AEC-Q101 automotive qualification standard, making it suitable for automotive electronics.

The maximum gate-source voltage is 30 V.

The forward voltage for this model is 1.1 V.

It is designed for low voltage, high current synchronous rectification applications, including power supply design and motor drives.

Yes, the ISC010N06NM5 complies with RoHS standards, ensuring it meets environmental regulations.

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