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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHK045N60E-T1-GE3 |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | +150°C |
| Package Type | PowerPAK 10 x 12 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 48A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.043Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 98nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Vishay SIHK045N60E-T1-GE3 is an E series N-Channel Power MOSFET designed for high-voltage switching and power conversion applications. It provides a maximum continuous drain current of 48 A with a drain-source voltage of 650 V, operating in depletion mode to enhance switching performance. Packaged in an 8-pin PowerPAK 10 x 12 surface-mount format, this MOSFET delivers excellent electrical and thermal performance suitable for automated PCB assembly.
The device features a low drain-source resistance of 0.043 Ω, reducing conduction losses and increasing efficiency. Its maximum power dissipation rating of 278 W allows operation under significant thermal loads. With a typical gate charge of 98 nC at gate-source voltage, the switching behavior is predictable and efficient. It supports a maximum gate-source voltage of 30 V, ensuring robust drive margin without overstress risks.
Designed to operate reliably between -55°C and +150°C, this component is well-suited for harsh industrial and automotive environments. It complies with RoHS environmental standards and meets the AEC-Q101 automotive qualification for use in vehicle electronic subsystems.
Common applications include offline power supplies requiring high blocking voltage, automotive power management systems, motor drive circuits, DC-DC converters in industrial equipment, and inverter stages in renewable energy systems. Its compact PowerPAK package enables effective heat dissipation and ease of use in surface-mounted power modules.
Maximum continuous drain current: 48 A. Maximum drain-source voltage: 650 V. Low on-resistance of 0.043 Ω for reduced conduction loss. Power dissipation up to 278 W. Typical gate charge of 98 nC at Vgs. Gate voltage tolerance up to ±30 V.
Operating temperature range from -55°C to +150°C. RoHS compliant and AEC-Q101 automotive qualified.
This Vishay MOSFET is an ideal choice for demanding power electronics applications in industrial, automotive, and renewable energy sectors. Explore more power semiconductors and MOSFETs on EnvMart to find compatible components and modules.
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