Vishay E Series N-Channel MOSFET 29 A 600 V Enhancement Mode 3-Pin TO-247 SiHG30N60E-GE3

Vishay SiHG30N60E-GE3 is an E Series N-Channel MOSFET designed for industrial and electronic applications requiring high voltage and current capacity. It supports a continuous drain current of 29 A and withstands drain-source voltages up to 600 V, making it suitable for power conversion and control tasks.

This device features ultra-low on-resistance (125 mΩ) combined with a low gate charge of 85 nC, optimizing switching efficiency and reducing power loss in high-frequency operations.

Its TO-247 package with 3 pins is designed for through-hole mounting, facilitating heat dissipation and mechanical stability in power supply designs, LED drivers, flyback converters, and telecom power supplies.

Operation is guaranteed across a wide temperature range from -55°C up to a maximum of 150°C, ensuring durability in demanding environments. Its maximum power dissipation rating is 250 W, enabling it to handle significant load currents with effective thermal management.

This MOSFET operates in enhancement mode and offers a forward voltage drop of approximately 1.3 V, reducing conduction losses in the circuit. Compact dimensions of length 15.87 mm, width 5.31 mm, and height 20.82 mm enable integration into space-constrained electronic assemblies.

Typical applications include server power supplies, LED lighting systems, power factor correction circuits, and switch mode power supplies. The device does not conform to automotive standards and is primarily intended for industrial and commercial electronic products.

Features ultra-low on-resistance and fast switching performance. Packaged in a 3-pin TO-247 through-hole mount for easy PCB integration. Suitable for power supplies, LED lighting, and telecom equipment. Maximum power dissipation of 250 W allows robust thermal handling.

Wide operating temperature range from -55°C to 150°C ensures reliable use. Enhancement mode operation with low gate charge minimizes energy losses. Compact package dimensions: 15.87 mm length, 5.31 mm width, 20.82 mm height.

Forward voltage approximately 1.3 V for efficient conduction. Designed for industrial electronic devices and power management. Explore our Electronics & Electricals category at EnvMart to find high-quality MOSFETs and semiconductor components for your industrial and commercial applications.