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Vishay EF N-Channel Power MOSFET 95A 650V Depletion Mode 3-Pin TO-247AC SIHG026N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHG026N60EF-GE3 |
| Mount Type | Surface |
| Series | EF |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 95A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.023Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 521W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for robust high-voltage switching applications.
- Capable of continuous 95 ampere drain current.
- Low drain-source resistance of 0.023 ohms reduces conduction loss.
- High power dissipation up to 521 watts for sustained performance.
- Typical gate charge of 63 nanoCoulombs ensures efficient switching.
- Gate-source voltage maximum rating of 30 volts supports wide gate drive range.
- Operates reliably between -55°C and +150°C for extreme environments.
- Compliant with RoHS standards and automotive AEC-Q101 qualification.
Product Description
Vishay SIHG026N60EF-GE3 is a high-power N-channel depletion mode MOSFET tailored for demanding power conversion and switching tasks. It supports a maximum continuous drain current of 95 amperes and withstands a drain-source voltage up to 650 volts. Housed in a rugged TO-247AC 3-pin package suited for surface mounting, this device offers reliable operation from -55°C to +150°C, accommodating harsh industrial and automotive thermal environments.
The MOSFET features a low on-resistance of 0.023 ohms, which minimizes conduction losses and improves efficiency during high load operation. It allows for a high power dissipation of 521 watts, ensuring durability under sustained heavy loads. Its typical gate charge of 63 nanoCoulombs provides predictable and efficient switching performance, while the maximum gate-source voltage of 30 volts allows versatile gate driving options.
Compliant with RoHS regulations and qualified to the automotive AEC-Q101 standard, this component is suitable for automotive powertrain electronics, industrial motor drives, high-voltage power supplies, server power modules, telecoms, battery management systems, and electric vehicle charging stations.
The TO-247AC package offers a large thermal pad area, facilitating effective heat sinking and robust PCB mounting for enhanced thermal management. This makes the device ideal for applications in industrial manufacturing, automotive electronics, commercial power converters, and other high-reliability sectors.
High voltage switching with 650V drain-source rating. Heavy load handling at 95A continuous drain current. Efficient conduction with 0.023Ω Rds(on) resistance. High power dissipation capacity for sustained operation. Predictable switching due to typical 63nC gate charge.
Wide operating temperature range from -55°C to +150°C. Certified RoHS and qualified AEC-Q101 for automotive use. Compact TO-247AC surface mount package aids thermal performance. Ideal for industrial, automotive, telecommunications, and power management applications requiring high voltage and high current MOSFETs.
Explore the Electronics & Electricals category for more high-performance semiconductor devices from Vishay and other industry-leading brands.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 95 amperes.
It has a maximum drain-source voltage rating of 650 volts.
The on-resistance (Rds(on)) is 0.023 ohms, which helps to minimize conduction losses.
This MOSFET can handle a maximum power dissipation of 521 watts.
The typical gate charge is 63 nanoCoulombs, ensuring efficient switching performance.
It operates reliably between -55°C and +150°C, making it suitable for extreme environments.
It is housed in a TO-247AC package, which is designed for surface mounting.
This unit is qualified to the automotive AEC-Q101 standard.
The maximum gate-source voltage rating is 30 volts, allowing for a wide range of gate drive options.
It is suitable for automotive powertrain electronics, industrial motor drives, high-voltage power supplies, and battery management systems.
The country of origin for this MOSFET is India.
This model features a 3-pin configuration.
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