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Vishay E Series N-Channel Power MOSFET 6.4 A 650 V Enhancement Mode Surface Mount TO-252 3-Pin SIHD690N60E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHD690N60E-GE3 |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.4A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 700mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62.5W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Utilizes 4th generation E series technology for enhanced efficiency.
- Features low figure-of-merit and reduced switching and conduction losses.
- Capable of handling avalanche energy with high avalanche energy rating (UIS).
- Maximum power dissipation of 62.5 watts ensures robust performance.
- Maximum gate-source voltage rating of 30 V and maximum operating temperature of 150°C.
- Low maximum drain-source resistance of 700 milliohms for effective conduction.
- Typical gate charge of 12 nanocoulombs at 10 V gate drive voltage.
- Operates over a wide temperature range from -55°C to 150°C.
Product Description
The Vishay SIHD690N60E-GE3 is a high-performance E Series N-Channel Power MOSFET designed for applications requiring efficient switching and power handling. It offers a maximum continuous drain current of 6.4 amperes and a maximum drain-source voltage rating of 650 volts, making it suitable for high-voltage power conversion and motor control.
Utilizing the 4th generation E series technology, this MOSFET features a low figure-of-merit and reduced effective capacitance, which help minimize switching and conduction losses, improving overall system efficiency. Its avalanche energy rating (unidirectional avalanche, UIS) provides robust protection against voltage spikes during transient events.
The device comes in a compact TO-252 surface mount package with three pins, ideal for space-constrained electronic designs. It has a maximum power dissipation of 62.5 watts and can withstand operating temperatures ranging from -55°C to 150°C. Additional specifications include a typical gate charge of 12 nC at a gate-source voltage of 10 V, a maximum drain-source resistance of 700 milliohms, a maximum gate-source voltage of ±30 V, and a forward voltage drop of approximately 1.2 V.
This MOSFET is widely used in power management, industrial controls, automotive electronics, and other demanding electrical equipment. It is suitable for surface mount PCB assembly and supports efficient energy conversion in various industrial and commercial applications.
Utilizes 4th generation E series technology for enhanced efficiency. Low figure-of-merit reduces conduction losses. Avalanche energy rated for reliable transient voltage protection. Compact TO-252 surface mount package with 3 pins.
High voltage capability with 650 V drain-source rating. Operating temperature range from -55°C to 150°C. Maximum continuous drain current of 6.4 A. Low typical gate charge of 12 nC enhances switching performance. Explore more Vishay MOSFETs and power semiconductor devices in EnvMart's wide range of electronic components for industrial and commercial use.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SIHD690N60E-GE3 is 6.4 amperes.
This model has a maximum drain-source voltage rating of 650 volts.
The maximum power dissipation for the SIHD690N60E-GE3 is 62.5 watts.
The typical gate charge at a gate-source voltage of 10 V is 12 nanocoulombs.
The maximum gate-source voltage rating is ±30 volts.
It operates over a wide temperature range from -55°C to 150°C.
The device comes in a TO-252 surface mount package with three pins.
The maximum drain-source resistance is 700 milliohms.
This model is suitable for power management, industrial controls, automotive electronics, and other demanding electrical equipment.
It utilizes 4th generation E series technology for enhanced efficiency and reduced losses.
The forward voltage drop is approximately 1.2 volts.
This device features an N-channel configuration.
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