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onsemi N-Channel MOSFET 12 A 100 V Enhancement Mode 3-Pin TO-220 RFP12N10L
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | RFP12N10L |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | 1.2V |
| onsemi N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-220 RFP12N10LBrand | onsemi |
Key Features
- This MOSFET operates with a maximum continuous drain current of 12 A.
- The device supports a maximum drain-source voltage of 100 V for robust switching.
- It features an enhancement mode channel type for efficient operation.
- Designed in a TO-220 package, suitable for through-hole mounting.
- Maximum power dissipation capacity of 60 W ensures durability in demanding conditions.
- The device can operate between -55°C and 150°C, supporting various industrial environments.
- Maximum gate-source voltage rating of -10 V to +10 V provides gate protection.
- Pin count is 3, ensuring compatibility with standard circuits.
Product Description
onsemi RFP12N10L is an N-Channel MOSFET designed for high-performance power switching applications. Featuring a 12 A maximum continuous drain current and a maximum drain-source voltage of 100 V, this enhancement mode MOSFET provides efficient control and switching in electronic circuits.
Housed in a robust TO-220 package with three pins and designed for through-hole mounting, the device is well suited for industrial, automotive, and consumer electronics use. It supports a wide operating temperature range from -55°C to +150°C, making it reliable for demanding environments.
The low maximum drain-source resistance (Rds(on)) of 200 mΩ minimizes power loss during operation, while the 1.2 V forward voltage aids in efficient conduction. The MOSFET also features a maximum gate-source voltage rating from -10 V to +10 V, protecting the gate terminal and ensuring stable operation.
The product complies with the automotive industry standard AEC-Q101, demonstrating its suitability for automotive system applications requiring reliability and robust design. Typical use cases encompass power management in electronic circuits, motor control, voltage regulation, and switching applications in industrial and automotive sectors.
This MOSFET operates with a maximum continuous drain current of 12 A. The device supports a maximum drain-source voltage of 100 V for robust switching. It features an enhancement mode channel type for efficient operation.
Designed in a TO-220 package, suitable for through-hole mounting. Maximum power dissipation capacity of 60 W ensures durability in demanding conditions. The device can operate between -55°C and 150°C, supporting various industrial environments.
Maximum gate-source voltage rating of -10 V to +10 V provides gate protection. Pin count is 3, ensuring compatibility with standard circuits. Forward voltage of 1.2 V facilitates efficient conduction with low losses. The MOSFET complies with automotive standard AEC-Q101, ensuring reliability in automotive applications.
Explore the onsemi N-Channel MOSFET RFP12N10L and other semiconductor solutions in the Electronics & Electricals category on EnvMart for high-quality power semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
It supports a maximum drain-source voltage of 100 V.
The maximum power dissipation capacity is 60 W.
This MOSFET can operate between -55°C and 150°C.
It is housed in a TO-220 package, suitable for through-hole mounting.
The maximum gate-source voltage rating is -10 V to +10 V.
The forward voltage is 1.2 V, aiding in efficient conduction.
This model has a pin count of 3.
It complies with the automotive industry standard AEC-Q101.
The maximum drain-source resistance (Rds(on)) is 200 mΩ.
The country of origin for this model is India.
It features an enhancement mode N-channel type.
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