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Vishay SQJ N-Channel MOSFET PowerPAK SO-8L 210 A 80 V 8-Pin SQJ182EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJ182EP-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Series | SQJ |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerPAK SO-8L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 210A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.005Ω |
| Maximum Power Dissipation Pd | 395W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The MOSFET features a low maximum drain-source resistance of 0.005 ohms for efficient power management.
- It supports a maximum power dissipation of 395 W, ensuring robust thermal performance.
- Designed with an 8-pin PowerPAK SO-8L package for surface mounting and compact integration.
- Operating temperature ranges from -55°C minimum to 175°C maximum, suitable for demanding environments.
- Typical gate charge is 64 nC, offering optimized switching speeds for high-frequency applications.
- Compliance with AEC-Q101 and RoHS standards ensures automotive and environmental reliability.
- With forward voltage of 1.1 V and maximum gate-source voltage of 20 V, it delivers consistent performance.
Product Description
Vishay SQJ182EP-T1_GE3 is a high-performance N-Channel MOSFET designed for industrial, automotive, and electronic power applications. It features a maximum continuous drain current of 210 A and withstands a drain-source voltage up to 80 V, making it suitable for high current switching scenarios in power electronics.
The device is housed in a compact 8-pin PowerPAK SO-8L surface mount package which allows for efficient PCB layout and thermal management. Its low drain-source resistance of 0.005 ohms minimizes power losses and enhances efficiency in power conversion systems.
Operating temperatures range from -55°C to 175°C, enabling reliable use in harsh industrial environments and automotive applications. The MOSFET has been tested and qualified according to AEC-Q101 standards, confirming its suitability for automotive grade applications.
Typical gate charge of 64 nC optimizes switching characteristics, improving efficiency in switching power supplies and motor control uses. The device features a forward voltage of 1.1 V and a maximum gate-source voltage tolerance of 20 V, supporting stable and safe operation.
Maximum continuous drain current of 210 A ensures high power capacity. Drain-source voltage rated at 80 V for versatile power applications. Thermally robust with power dissipation up to 395 W. Surface mount PowerPAK SO-8L package supports compact and efficient designs.
Wide operating temperature from -55°C to 175°C for reliability. AEC-Q101 and RoHS certified for automotive and environmental compliance. Optimized gate charge improves switching performance.
Ideal for industrial power management, automotive electronics, and assembly in consumer electronics manufacturing, the Vishay SQJ182EP-T1_GE3 MOSFET combines high current capacity with reliable operational integrity. Professionals sourcing components for power supplies, motor drivers, and automotive control units will benefit from its performance and durability.
Explore the Vishay product range on EnvMart for advanced electronic components designed to meet stringent industrial standards and support innovative electrical engineering solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 210 A, making it suitable for high current switching applications.
The maximum drain-source voltage rating for this MOSFET is 80 V, allowing it to handle various power applications effectively.
This model is housed in a PowerPAK SO-8L package, designed for surface mounting and compact integration on PCBs.
The operating temperature range for the SQJ182EP-T1_GE3 is from -55°C to 175°C, making it suitable for harsh environments.
The typical gate charge for the SQJ182EP-T1_GE3 is 64 nC, which helps optimize switching speeds for high-frequency applications.
This model complies with AEC-Q101 and RoHS standards, ensuring its suitability for automotive and environmental applications.
The maximum power dissipation for the SQJ182EP-T1_GE3 is 395 W, which ensures robust thermal performance during operation.
The maximum gate-source voltage for the SQJ182EP-T1_GE3 is 20 V, supporting stable operation in various applications.
The forward voltage rating for the SQJ182EP-T1_GE3 is 1.1 V, contributing to its overall performance in power management.
The dimensions of this model are 6.15 mm in length and 4.9 mm in width, facilitating efficient PCB layout.
The Vishay SQJ182EP-T1_GE3 is suitable for industrial power management, automotive electronics, and consumer electronics manufacturing.
The maximum drain-source resistance for this model is 0.005 ohms, which minimizes power losses in power conversion systems.
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