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Vishay N-Channel MOSFET PowerPAK SO-8L, 210 A Drain Current, 80 V Drain Source Voltage, 395 W Power SQJ182EP-T1_GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Length 6.15mm
Model SQJ182EP-T1_GE3
Width 4.9mm
Mount Type Surface
Series SQJ
Maximum Operating Temperature 175°C
Package Type PowerPAK SO-8L
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101, RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 210A
Maximum Drain Source Voltage Vds 80V
Maximum Drain Source Resistance Rds 0.005Ω
Maximum Power Dissipation Pd 395W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • Maximum continuous drain current of 210 amps ensures high current handling capability.
  • Low maximum drain-source resistance of 0.005 ohms minimizes power loss.
  • High maximum power dissipation of 395 watts supports demanding applications.
  • Wide operating temperature range from -55°C to 175°C suits automotive and industrial uses.
  • AEC-Q101 qualified and RoHS compliant for automotive and environmental standards.
  • Compact PowerPAK SO-8L surface mount package enhances PCB space efficiency.
  • Typical gate charge of 64 nC at Vgs supports efficient switching performance.
  • Maximum gate-source voltage rating of 20 V protects the device during gate drive.

Product Description

Vishay SQJ182EP-T1_GE3 is a robust N-Channel MOSFET designed for high-performance switching and power management applications. This MOSFET features a maximum continuous drain current of 210 A and a drain-source voltage rating of 80 V, making it suitable for demanding electronic circuits requiring efficient high-current switching.

Housed in a compact PowerPAK SO-8L surface-mount package with 8 pins, this device offers optimized PCB area savings without compromising electrical characteristics. The device exhibits a very low maximum drain-source on-resistance of 0.005 ohms, which improves efficiency and reduces heat generation during operation.

It supports high power dissipation of up to 395 W and operates reliably across a wide temperature range of -55°C to 175°C, meeting stringent automotive grade AEC-Q101 qualification and RoHS environmental compliance. The typical gate charge of 64 nC at Vgs enables fast switching for precise power control in applications such as automotive electronics, power supplies, industrial motor drives, and electronic control units.

Other key electrical limits include a maximum gate-source voltage of 20 V and a forward voltage of 1.1 V, ensuring device protection and reliable conduction performance. Dimensions of 6.15 mm length by 4.9 mm width make it well-suited for compact hardware designs.

Maximum continuous drain current of 210 A ensures high current capacity. PowerPAK SO-8L package provides low thermal resistance and compact footprint. AEC-Q101 qualification certifies automotive reliability standards. Minimal on-resistance improves efficiency and reduces losses.

Wide operating temperature range supports industrial and automotive uses. RoHS compliance reduces environmental impact. Fast switching enabled by low gate charge.

This discrete MOSFET is applicable in industrial, automotive, and power electronics fields where effective high current switching and thermal management are critical. It is ideal for motor control, power converters, and general semiconductor discrete device applications.

Explore a comprehensive range of Vishay semiconductor components in the EnvMart catalogue to meet diverse electronic system design needs.

Vishay N-Channel MOSFET PowerPAK SO-8L, 210 A Drain Current, 80 V Drain Source Voltage, 395 W Power SQJ182EP-T1_GE3
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