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Toshiba N-Channel MOSFET 2 A 40 V 3-Pin SOT-23 Surface Mount SSM3K339R,LF(T

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Toshiba N-Channel MOSFET 2 A 40 V 3-Pin SOT-23 Surface Mount SSM3K339R,LF(T

Name: Toshiba N-Channel MOSFET 2 A 40 V 3-Pin SOT-23 Surface Mount SSM3K339R,LF(T
Brand: Toshiba
SKU: 174540
Price: 0.11 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	India
Brand	Toshiba
Height	800μm
Length	2.4mm
Model	SSM3K339R,LF(T
Width	2.9mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	2A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	220mΩ
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	1.1nC
Maximum Gate Source Voltage Vgs	12V
Forward Voltage Vf	-0.85V

Key Features

This MOSFET features a maximum continuous drain current of 2 amperes.
It supports a maximum drain-source voltage of 40 volts.
The device has a low maximum drain-source resistance of 220 milliohms.
Typical gate charge is 1.1 nanocoulombs at a gate-source voltage of 1 volt.
Maximum power dissipation of 2 watts ensures efficient thermal handling.
Operates reliably over a wide temperature range from -55°C to 150°C.
The forward voltage of the device is -0.85 volts.
Comes in a compact SOT-23 package with surface mount capability.

Product Description

Toshiba SSM3K339R,LF(T is an N-Channel MOSFET designed for efficient power management and switching functions in discrete semiconductor applications. Housed in a compact 3-pin SOT-23 surface mount package, it is fabricated using silicon material, ideal for various electronics and electrical systems.

This MOSFET supports a maximum continuous drain current of 2 amperes and can withstand a maximum drain-source voltage of 40 volts, making it well suited for moderate power applications. The device exhibits a low maximum drain-source resistance of 220 milliohms, contributing to low conduction losses and improved system efficiency.

The typical gate charge of 1.1 nanocoulombs at a gate-source voltage of 1 volt enables swift switching performance. With a maximum power dissipation of 2 watts, the MOSFET can operate reliably over a broad temperature range from -55°C to 150°C, accommodating demanding industrial environments.

The forward voltage drop is rated at -0.85 volts. The small package dimensions (Length 2.4 mm, Width 2.9 mm, Height 800 µm) make it fitting for space-constrained circuit boards. Although it does not meet any specific automotive standards, it is compliant with RoHS and is suitable for general electronics manufacturing, laboratory, and industrial electronic component replacement and design.

The MOSFET is commonly employed in power management switching circuits, power supplies, and discrete semiconductor assemblies across various industrial, electrical, and laboratory applications.

Maximum continuous drain current of 2 A. Maximum drain-source voltage of 40 V. Low drain-source resistance of 220 mΩ. Typical gate charge of 1.1 nC at Vgs 1 V. Maximum power dissipation of 2 W. Operating temperature range of -55°C to 150°C.

Compact 3-pin SOT-23 surface mount package. Forward voltage of -0.85 V. Surface mount type for easy PCB integration. Ideal for power management and switching applications. Consider exploring more semiconductor and MOSFET devices within the Electronics & Electricals category on EnvMart for your industrial and laboratory requirements.