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onsemi SUPERFET III N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 Package NTPF250N65S3H
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 29.95mm |
| Length | 10.63mm |
| Model | NTPF250N65S3H |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | SUPERFET III |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 29W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features charge balance technology for low on-resistance and gate charge.
- Maximum continuous drain current is 13 amperes.
- Maximum drain-source voltage rating of 650 volts ensures high-voltage tolerance.
- Maximum power dissipation is 29 watts, suitable for efficient thermal management.
- Typical gate charge is 24 nanocoulombs at 24 volts gate-source voltage.
- Operating temperature range from -55°C to 175°C supports extreme environments.
- Through-hole mounting in TO-220 package with 3 pins simplifies board assembly.
- Designed for superior switching performance and high reliability under low temperature conditions.
Product Description
onsemi NTPF250N65S3H is a high voltage SUPERFET III series N-Channel MOSFET designed for power electronics applications requiring efficient switching and low conduction losses. This discrete semiconductor device supports a maximum continuous drain current of 13 A and a drain-source voltage rating of 650 V, making it suitable for industrial, automotive, and power management circuits.
Featuring advanced charge balance technology, the MOSFET offers outstanding low on-resistance and reduced gate charge, enhancing overall circuit efficiency and reducing thermal dissipation. Its typical gate charge is 24nC at a gate-source voltage of 24 V, which helps achieve fast switching speeds.
Housed in a TO-220 through-hole package with 3 pins, this device simplifies mounting and ensures compatibility with standard PCB layouts. The maximum power dissipation of 29 W allows the device to reliably operate under demanding loads.
The MOSFET operates across a wide temperature range from -55°C to a maximum of 175°C, enabling use in harsh environmental conditions. Additionally, it features a maximum gate-source voltage of ±30 V and a low typical forward voltage of 1.2 V, reducing voltage drop in conduction paths.
This onsemi MOSFET is Pb-free and RoHS compliant, meeting current environmental standards in electronics manufacturing. Charge balance technology minimizes conduction losses and enhances switching efficiency. Maximum continuous drain current of 13 A for robust power handling.
650 V maximum drain-source voltage for high-voltage applications. TO-220 through-hole package for easy mounting and heat dissipation. Wide operating temperature range from -55°C to 175°C for varied applications. Low gate charge enables fast switching and reduces power losses.
Lead-free and RoHS compliant for environmental safety. Typical forward voltage of 1.2 V optimizes conduction path efficiency.
This MOSFET is ideally suited for industrial power supplies, motor control, power converters, and other applications requiring high-voltage switching with low losses. Its advanced technology ensures enhanced system reliability and improved thermal performance.
Explore more onsemi products and related semiconductor components at EnvMart for comprehensive power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13 A.
This unit has a maximum drain-source voltage rating of 650 V, making it suitable for high-voltage applications.
The maximum power dissipation for this model is 29 W, allowing for efficient thermal management.
The typical gate charge for this MOSFET is 24 nC at a gate-source voltage of 24 V.
The dimensions of the TO-220 package are 29.95 mm in height, 10.63 mm in length, and 4.9 mm in width.
This MOSFET operates within a temperature range of -55°C to 175°C, suitable for extreme environments.
This model features a 3-pin configuration, facilitating easy mounting.
The maximum gate-source voltage for this MOSFET is ±30 V.
The typical forward voltage drop for this MOSFET is 1.2 V, which helps optimize conduction path efficiency.
This model uses through-hole mounting, which simplifies board assembly.
This device is part of the SUPERFET III series, designed for efficient switching and low conduction losses.
Yes, this MOSFET is Pb-free and RoHS compliant, meeting current environmental standards.
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