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Vishay Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SIHA105N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 13.8mm |
| Length | 10.3mm |
| Model | SIHA105N60EF-GE3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | SiHA105N60EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 102mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 29 amperes provides robust current handling.
- 600 V maximum drain-source voltage supports high voltage applications.
- TO-220 packaging ensures reliable through-hole mounting.
- Low drain-source resistance of 102 milliohms reduces conduction losses.
- Capable of dissipating up to 35 watts power continuously.
- Typical gate charge of 53 nanocoulombs enables fast switching performance.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Forward voltage rating of 1.2 volts supports efficient device operation.
Product Description
Vishay's SIHA105N60EF-GE3 N-Channel Enhancement Mode MOSFET features advanced 4th generation E series technology designed to reduce switching and conduction losses, optimizing efficiency in power electronics.
This discrete semiconductor device is housed in a durable TO-220 package with three pins, suitable for through-hole mounting on PCBs. The device supports a maximum continuous drain current of 29 A and withstands drain-source voltages up to 600 V, making it ideal for industrial and electronic power switching applications including power supplies, motor control, and DC-DC converters.
The MOSFET exhibits a low drain-source resistance of 102 mΩ which minimizes conduction losses, improving thermal performance and operational reliability. It dissipates a maximum power of 35 W effectively, with a gate charge of 53 nC facilitating rapid switching cycles.
Designed to perform across a broad operating temperature range stretching from -55°C to 150°C, this MOSFET is suitable for demanding environments. The forward voltage drop of 1.2 V supports efficient current flow with reduced power loss.
Dimensions are compact, measuring approximately 13.8 mm in height, 10.3 mm in length, and 4.7 mm in width, thus aiding in compact and flexible circuit board designs. Maximum continuous drain current of 29 amperes enables robust power handling.
600 V drain-source voltage rating supports high-voltage switching. Low on-resistance of 102 milliohms reduces power dissipation. TO-220 package and 3-pin through-hole mount design for easy integration. Enhanced switching characteristics due to low gate charge of 53 nC.
Operating temperature range from -55°C up to 150°C for versatility. Forward voltage of 1.2 V for improved efficiency. Maximum power dissipation rating of 35 W ensures device durability.
This product is engineered for use in industrial, electronic component manufacturing, power conversion, and motor control sectors. Suitable as a replacement or upgrade in power MOSFET applications requiring high voltage, current, and efficient switching.
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Frequently Asked Questions
The maximum continuous drain current for this model is 29 amperes.
It has a maximum drain-source voltage rating of 600 volts, suitable for high-voltage applications.
This MOSFET can dissipate a maximum power of 35 watts continuously.
The dimensions of the TO-220 package are approximately 13.8 mm in height, 10.3 mm in length, and 4.7 mm in width.
The typical gate charge for this model is 53 nanocoulombs, which facilitates fast switching performance.
It operates within a temperature range from -55°C to 150°C, making it suitable for harsh environments.
The forward voltage drop is rated at 1.2 volts, which supports efficient device operation.
The low drain-source resistance of 102 milliohms reduces conduction losses, improving thermal performance and operational reliability.
This MOSFET is designed for through-hole mounting, suitable for PCB integration.
It features an N-channel type configuration, which is common for enhancement mode MOSFETs.
This model is suitable for industrial and electronic power switching applications including power supplies, motor control, and DC-DC converters.
The maximum gate-source voltage for this MOSFET is 30 volts.
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