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Vishay Type N-Channel MOSFET, 12 A Maximum Continuous Drain Current, 30 V Maximum Drain Source Voltage SIS412DN-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.79mm |
| Length | 3.61mm |
| Model | SIS412DN-T1-GE3 |
| Width | 3.61mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.03Ω |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 3.8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Low on-resistance of 0.03 Ω reduces conduction losses.
- Supports a maximum power dissipation of 15.6 W for reliable thermal performance.
- Operates in a wide temperature range from -55 °C to 150 °C.
- Typical gate charge of 3.8 nC enables fast switching transitions.
- Equipped with 8 pins in a compact PowerPAK 1212 package measuring 3.61 x 3.61 mm.
- Maximum gate-source voltage tolerance of ±20 V for flexible drive options.
- Forward voltage of 1.2 V minimizes losses in synchronous circuits.
Product Description
Vishay SIS412DN-T1-GE3 is a surface-mount Type N-Channel MOSFET transistor ideal for medium-power switching applications in compact electronic systems. It supports a maximum continuous drain current of 12 A and maximum drain-source voltage of 30 V, making it suitable for power management tasks requiring efficient conduction and thermal operation.
The device comes in an 8-pin PowerPAK 1212 package that facilitates high-density PCB layouts with excellent thermal contact to copper planes, essential for managing the maximum power dissipation rating of 15.6 W. It operates across a broad temperature range from -55 °C up to 150 °C, ensuring reliability in industrial and commercial environments.
With a low on-resistance of 0.03 Ω, this MOSFET enables reduced conduction losses, enhancing performance in synchronous buck converters, battery management systems, motor driver circuits, and power distribution stages. Its typical gate charge of 3.8 nC allows for faster switching, minimizing switching losses and improving efficiency.
The maximum gate-source voltage is ±20 V, providing flexibility in driver design for various power electronics. The device exhibits a forward voltage of 1.2 V, which should be considered in synchronous-rectification topologies to assess conduction losses during reverse current events.
Common applications include telecommunications equipment load switches, LED drivers, and motor driver modules requiring high current switching capabilities. Its IEC 61249-2-21 compliance signifies adherence to industry standards.
Overall, the SIS412DN-T1-GE3 MOSFET offers a reliable and efficient solution for power switching in industrial, telecommunications, automotive electronics, and laboratory equipment contexts.
Low on-resistance reduces conduction losses. High continuous drain current supports demanding loads. Wide operating temperature range for versatility. Compact PowerPAK 1212 package for space-saving designs. Suitable for battery management, motor drivers, and LED applications.
Explore more Vishay semiconductor components in the EnvMart Industrial Electronics catalog.
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Frequently Asked Questions
The maximum continuous drain current for the SIS412DN-T1-GE3 is 12 A.
It supports a maximum drain-source voltage of 30 V.
The on-resistance is 0.03 Ω, which helps reduce conduction losses.
The typical gate charge is 3.8 nC, allowing for fast switching transitions.
The package measures 3.61 mm x 3.61 mm with a height of 0.79 mm.
It operates within a temperature range of -55 °C to 150 °C.
The maximum power dissipation is rated at 15.6 W.
The maximum gate-source voltage tolerance is ±20 V.
It is suitable for applications such as telecommunications equipment, LED drivers, and motor driver modules.
It complies with IEC 61249-2-21 standards.
This model has 8 pins.
The forward voltage is 1.2 V, which is relevant for synchronous-rectification topologies.
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