Infineon N-Channel Power MOSFET 60 V, 288 A, 1.15 mΩ Rds(on), 1.89 kW Pd, 8-Pin TDSON ISC011N06LM5ATMA1

Infineon ISC011N06LM5ATMA1 is a high-performance N-Channel Power MOSFET tailored for demanding industrial and electronic applications requiring high current and power switching capability. Rated for a maximum continuous drain current of 288 A and a drain-source voltage of 60 V, it features a remarkably low drain-source on resistance of 1.15 milliohms which results in minimal conduction losses during operation.

This device is enclosed in a compact 8-pin TDSON package optimized for surface mount assembly on printed circuit boards, facilitating efficient space utilization and thermal management. The MOSFET operates reliably over an extensive temperature range from -55°C to 175°C, making it suitable for high temperature environments such as power regulation in industrial machinery, telecom power modules, and motor driver circuits.

The ISC series MOSFET supports power dissipation up to 1.89 kW, enabling it to handle heavy load conduction effectively. Its gate characteristics include a typical gate charge of 170 nC and a maximum gate-source voltage rating of 20 V, providing robust control and switching dynamics essential in DC-DC converters and power supply designs.

Typical applications of this device include high current converters, power supplies, motor drive electronics, and server power modules. The precise physical footprint with dimensions 6.1 mm length, 5.35 mm height, and 1.2 mm width allows design engineers to allocate accurate PCB soldering land areas.

The device is not certified to specific industry standards or automotive ratings but provides essential power semiconductor performance for various industrial and electronic uses. Its enhancement mode N-channel conduction mode ensures standard MOSFET switching operation.

Features a low drain-source resistance of 1.15 milliohms to minimize conduction losses. Supports power dissipation up to 1.89 kilowatts for handling heavy loads. Equipped with an 8-pin TDSON surface-mount package for compact PCB integration.

Operates over a wide temperature range from -55°C to 175°C for reliable performance in harsh environments. Enhancement mode N-channel type with 20 V maximum gate-source voltage ensures robust switching capability. Typical gate charge of 170 nanoCoulombs allows controlled switching dynamics.

Physical dimensions are 6.1 mm length, 5.35 mm height, and 1.2 mm width for precise board footprint allocation.

Infineon products provide reliable solutions for industrial, telecommunications, computer server power supplies, motor drives, and electronic power regulation. Explore more in the Power MOSFET category at EnvMart.