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Infineon CoolMOS CE N-Channel MOSFET 5 A 600 V Enhancement 3-Pin IPAK IPU60R1K5CEAKMA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPU60R1K5CEAKMA2 |
| Width | 6.22mm |
| Mount Type | Through Hole |
| Series | CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 49W |
| Typical Gate Charge Qg @ Vgs | 9.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- The MOSFET features a 3-pin IPAK package suitable for through-hole mounting.
- It operates with an enhancement mode N-channel channel type offering a maximum drain current of 5 A.
- Maximum drain-source voltage is rated at 600 V providing reliability in high-voltage circuits.
- The device has a maximum drain-source resistance (Rds) of 1.5 Ω to ensure low conduction losses.
- Typical gate charge at Vgs is 9.4 nC which aids in fast switching performance.
- Supports a maximum gate-source voltage of 20 V with a forward voltage of 900 mV.
- Power dissipation capability is 49 W with operating temperatures ranging from -40°C to 150°C.
- Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.41 mm.
Product Description
Infineon IPU60R1K5CEAKMA2 CoolMOS CE N-Channel MOSFET is engineered for optimizing efficiency in power electronics through low conduction and switching losses. Designed using superjunction technology, this device balances optimal RDS(on) with a compact IPAK package, making it ideal for hard and soft switching applications.
It achieves maximum continuous drain current of 5 A with a maximum drain-source voltage of 600 V. The enhanced channel mode provides reliable switching performance with a maximum drain-source resistance of 1.5 Ω, reducing power losses in low-power chargers and other electronics.
The MOSFET has a typical gate charge of 9.4 nC at gate voltage, enabling fast gate switching and thus improving overall device efficiency. It supports a maximum gate-source voltage up to 20 V and has a forward voltage of 900 mV which contributes to lower conduction losses.
Owing to its robust design, the Infineon CoolMOS CE operates efficiently across a temperature range from -40°C to 150°C, making it suitable for industrial, consumer electronics, and power supply applications.
The compact through-hole IPAK package with three pins (length 6.73 mm, width 6.22 mm, height 2.41 mm) allows easy mounting and integration on printed circuit boards. Power dissipation capability of 49 W ensures stable performance under demanding conditions.
The MOSFET is optimized for low conduction and switching losses. It features superjunction technology for enhanced efficiency. Compact 3-pin IPAK package suitable for through-hole mounting is provided. Suitable for applications in electronics, power supply, and industrial use.
Operates within a wide temperature range from -40°C to 150°C. Provides capability to handle continuous drain current of 5 A. Maximum drain-source voltage of 600 V supports high-voltage requirements. Designed for improved efficiency in low power chargers and mobile device applications.
This Infineon MOSFET is a reliable component for semiconductor device applications requiring efficient power switching and durability. Explore more Infineon semiconductor products and related MOSFET devices on EnvMart for industrial, electronic, and power management needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 5 A.
This unit has a maximum drain-source voltage rating of 600 V, suitable for high-voltage applications.
The typical gate charge at Vgs for this MOSFET is 9.4 nC, which aids in fast switching performance.
It has a maximum power dissipation capability of 49 W, allowing stable performance under demanding conditions.
The dimensions of the IPAK package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
The maximum gate-source voltage supported by this model is 20 V.
This model operates within a temperature range from -40°C to 150°C.
It features an enhancement mode N-channel type, which provides reliable switching performance.
The maximum drain-source resistance (Rds) for this unit is rated at 1.5 Ω, ensuring low conduction losses.
The forward voltage for this model is 900 mV, contributing to lower conduction losses.
It supports through-hole mounting, making it easy to integrate into printed circuit boards.
The country of origin for this MOSFET is India.
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