Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays 2.3A 30V Enhancement 6-Pin TSOP BSL308CH6327XTSA1

Infineon BSL308CH6327XTSA1 is a dual OptiMOS MOSFET array combining P-channel and N-channel enhancement mode transistors in a compact 6-pin TSOP surface-mount package. This device is optimized for switching and power management tasks in automotive and industrial electronics with a maximum continuous drain current of 2.3 amperes and maximum drain-source voltage of 30 volts. Its low on-resistance (57mΩ) minimizes conduction losses and heat generation, enabling efficient operation.

Capable of operating over a wide ambient temperature range from -55°C to 150°C, the BSL308CH6327XTSA1 supports robust usage in harsh thermal environments. The device offers a maximum gate-source voltage of 20 volts to protect gate integrity during voltage transients and features a forward voltage of 1.1 volts to improve efficiency in diode conduction paths.

Designed for surface-mount assembly on standard PCB land patterns, its compact dimensions of 2.9mm length, 1.6mm width, and 1mm height make it ideal for high-density circuit designs. The transistor configuration is dual with one element per chip, delivering both P- and N-channel functionality suitable for switching applications in motor driver circuits, DC-DC converters, battery management, and power distribution.

The product complies with RoHS directives and IEC61249-2-21 material standards, ensuring environmentally friendly manufacturing. Additionally, it meets the AEC-Q101 automotive qualification standard, making it suitable for automotive body control modules and other demanding electronics requiring automotive-grade reliability.

Use cases for this MOSFET array include automotive body control modules, high density DC-DC switching stages, battery management systems, and motor driver low-side or high-side switching. The dual transistor design supports compact PCB layouts where space is constrained and component integration is critical.

Package contents include one MOSFET array in a 6-pin TSOP package. This component provides reliable operation and efficient switching performance in industrial, automotive, and commercial electronics applications.

Maximum continuous drain current of 2.3 amperes. Maximum drain-source voltage of 30 volts supports automotive architectures. Low Rds(on) 57 milliohms for efficiency. Operating temperature range from -55°C to 150°C. Dual transistor configuration with P- and N-channel transistors.

Maximum gate-source voltage 20 volts for gate protection. Forward voltage 1.1 volts for diode conduction efficiency. AEC-Q101 automotive standard compliant for quality assurance. Compact TSOP 6-pin surface-mount package.

Explore additional Infineon MOSFET arrays and semiconductor components in EnvMart's Electronics & Electricals category for advanced power management solutions.