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Vishay E N-Channel Power MOSFET 15 A 800 V Enhancement Mode 3-Pin TO-247AC SIHG17N80AE-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 35.3mm |
| Model | SIHG17N80AE-GE3 |
| Width | 15.66mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 179W |
| Typical Gate Charge Qg @ Vgs | 41nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current is 15 A for demanding power loads.
- Maximum drain-source voltage rating of 800 V supports high-voltage applications.
- TO-247AC package with through-hole mounting for reliable mechanical and thermal connection.
- The device has a low RDS(on) of 250 mΩ reducing conduction losses during switching.
- Maximum power dissipation of 179 W enables high power switching performance.
- Typical gate charge of 41 nC provides predictable switching behavior.
- Maximum gate-source voltage tolerance of 30 V protects device from overvoltage.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
Product Description
Vishay SIHG17N80AE-GE3 is a robust E series enhancement-mode N-channel Power MOSFET designed for high-voltage, high-current switching applications. The device operates at a maximum continuous drain current of 15 A and withstands a maximum drain-source voltage of 800 V. Supplied in a TO-247AC package, it is intended for through-hole mounting, providing excellent mechanical stability and thermal dissipation for demanding electronic applications.
This Power MOSFET features a low maximum drain-source on resistance (RDS(on)) of 250 mΩ, which significantly reduces conduction losses and enhances energy efficiency in power conversion systems. The device supports a maximum power dissipation of 179 W, making it suitable for high-power switching circuits.
The typical gate charge of 41 nC ensures predictable and reliable switching behavior, critical for design accuracy in power supplies and converters. With a maximum gate-source voltage of 30 V, the MOSFET is protected against gate overdrive conditions, increasing device reliability.
Operating temperature range from -55°C to 150°C allows usage under extreme environmental conditions, such as industrial motor drives, laboratory equipment, and HVAC systems. It is RoHS compliant, reflecting adherence to environmental regulations.
Its forward voltage of 1.2 V is important for thermal and power-loss calculations during operation. Though not qualified for automotive standards, it is ideal for industrial, laboratory, and commercial power electronics applications including switch-mode power supplies, flyback and boost converters, and motor control.
Maximum continuous drain current of 15 A ensures handling of substantial load currents. High voltage rating of 800 V supports robust power system operations. Low RDS(on) reduces conduction losses and improves efficiency.
Reliable through-hole mounting in TO-247AC package enhances durability and heat dissipation. Wide temperature tolerance makes it suitable for extreme environments. RoHS compliance guarantees environmental standards. Designed for power supplies, converters, industrial drives, and lab equipment.
Explore the Vishay Power MOSFET range at EnvMart for your industrial and commercial power electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 A, suitable for demanding power loads.
This MOSFET has a maximum drain-source voltage rating of 800 V, which supports high-voltage applications.
It comes in a TO-247AC package and is designed for through-hole mounting, ensuring reliable mechanical and thermal connection.
The maximum power dissipation for this unit is 179 W, enabling high power switching performance.
The typical gate charge is 41 nC, which provides predictable switching behavior.
It has a maximum gate-source voltage tolerance of 30 V, which protects the device from overvoltage conditions.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
The maximum drain-source on resistance (RDS(on)) is 250 mΩ, which reduces conduction losses during switching.
The dimensions are 35.3 mm in length, 15.66 mm in width, and 4.83 mm in height.
Yes, this model is RoHS compliant, adhering to environmental regulations.
It is suitable for applications such as switch-mode power supplies, flyback and boost converters, and motor control.
The forward voltage is 1.2 V, important for thermal and power-loss calculations during operation.
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