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Vishay E Series N-Channel MOSFET, 40 A Continuous Drain Current, 600 V Drain Source Voltage, Enhancement SIHP065N60E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 15.49mm |
| Length | 10.51mm |
| Model | SIHP065N60E-GE3 |
| Width | 4.65mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum continuous drain current of 40 A for high-current applications.
- Drain source voltage of 600 V allows operation in high voltage environments.
- Low on-resistance of 65 milliohms reduces conduction losses.
- Maximum power dissipation rating of 250 W ensures robust thermal handling.
- Enhancement mode channel type configured in a through-hole 4-pin TO-220 package.
- Wide operating temperature range from -55°C to 150°C for demanding environmental conditions.
- Maximum gate source voltage tolerance of -30 V to +30 V enhances protection and reliability.
- Fast switching capability with low input capacitance and ultra-low gate charge of 49 nC.
Product Description
Vishay SIHP065N60E-GE3 is an E Series N-Channel MOSFET designed for high power switching applications in industrial, telecommunications, power supply, and LED lighting sectors. This 4-pin TO-220 package device supports a maximum continuous drain current of 40 A and operates at high drain source voltages up to 600 V. It is an enhancement mode transistor optimized for fast switching with low gate charge, which reduces switching losses.
The MOSFET features low on-resistance of 65 milliohms ensuring efficient conduction and a maximum power dissipation of 250 W to maintain robustness in demanding electrical environments. It allows for a maximum gate source voltage range from -30 V to +30 V, contributing to device durability and protection.
Designed with through-hole mounting in TO-220 packages, it withstands a broad operating temperature range from -55°C to 150°C, making it suitable for harsh conditions. The device length, width, and height are approximately 10.51 mm, 4.65 mm, and 15.49 mm respectively, providing a compact form factor for versatile hardware integration.
Supports a continuous drain current of 40 A. Drain-source voltage up to 600 V for high voltage applications. Low maximum drain-source resistance of 65 milliohms. Power dissipation capacity of 250 W for thermal reliability.
Enhancement mode device in 4-pin TO-220 package for through-hole mounting. Gate source voltage tolerance of -30 V to +30 V. Ultra-low gate charge of 49 nC enabling fast switching. Operating temperature range from -55°C to 150°C.
Compact dimensions suitable for varied installations. This MOSFET is ideal for use in telecommunications power supplies, servers, LED lighting, flyback converters, power factor correction circuits, and switch mode power supplies.
Explore more industrial-grade semiconductor devices and power MOSFETs from Vishay and other top manufacturers in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A, making it suitable for high-current applications.
It can handle a maximum drain-source voltage of 600 V, allowing operation in high voltage environments.
The maximum drain-source resistance is 65 milliohms, which helps reduce conduction losses during operation.
This model has a maximum power dissipation rating of 250 W, ensuring robust thermal handling in demanding applications.
The maximum gate-source voltage tolerance is -30 V to +30 V, enhancing the device's protection and reliability.
The typical gate charge is 49 nC, which enables fast switching capabilities.
It operates within a temperature range of -55°C to 150°C, suitable for harsh environmental conditions.
This device is packaged in a TO-220 format, designed for through-hole mounting.
The dimensions are approximately 10.51 mm in length, 4.65 mm in width, and 15.49 mm in height.
It is ideal for high power switching applications in telecommunications, power supplies, LED lighting, and more.
This model features an enhancement mode N-channel configuration, optimized for fast switching.
This MOSFET has a pin count of 4, facilitating its integration into various circuits.
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