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Toshiba N-Channel Enhancement MOSFET 30 A 650 V TO-247 Package TK090N65Z,S1F(S
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 5.02mm |
| Length | 40.02mm |
| Model | TK090N65Z,S1F(S |
| Width | 15.94mm |
| Mount Type | Through Hole |
| Series | TK090N65Z |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 47nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | -1.7V |
Key Features
- This MOSFET features a TO-247 through hole package with 3 pins.
- Designed for high-speed switching with low drain-source resistance of 90 mΩ.
- Maximum power dissipation capability of 230 W supports demanding applications.
- Operating temperature ranges from -55°C up to 150°C for robust performance.
- Typical gate charge is 47 nC at specified gate-source voltage.
- Maximum gate-source voltage tolerance up to 30 V ensures safe drive levels.
- The device provides forward voltage of -1.7 V facilitating efficient conduction.
- Compact dimensions with length 40.02 mm, width 15.94 mm, and height 5.02 mm.
Product Description
Toshiba TK090N65Z,S1F(S is an N-Channel Enhancement MOSFET designed for high power and high voltage applications with a maximum continuous drain current of 30 A and voltage rating of 650 V. Packaged in a durable TO-247 through-hole case with 3 pins, it supports efficient thermal management and reliable connections.
The MOSFET features a low maximum drain source resistance of 90 mΩ, enabling minimal conduction losses during switching operations. Its maximum power dissipation is rated at 230 W, allowing it to handle significant power loads in industrial and commercial electronic equipment.
Operating temperature range from -55°C to 150°C ensures stable performance in harsh environments. The typical gate charge of 47 nC at specified gate-source voltage supports fast switching capabilities essential for power supplies and motor control applications.
With a maximum gate-source voltage of 30 V and a forward voltage drop of -1.7 V, the device offers robust gate-drive and conduction characteristics. Physical dimensions of 40.02 mm length, 15.94 mm width, and 5.02 mm height make it suitable for standard PCB layouts and heat sink mounting.
This MOSFET is commonly employed in switching power supplies, industrial electronics, and other semiconductor-based power control systems. This MOSFET features a TO-247 through hole package with 3 pins. Designed for high-speed switching with low drain-source resistance of 90 mΩ.
Maximum power dissipation capability of 230 W supports demanding applications. Operating temperature ranges from -55°C up to 150°C for robust performance. Typical gate charge is 47 nC at specified gate-source voltage. Maximum gate-source voltage tolerance up to 30 V ensures safe drive levels.
The device provides forward voltage of -1.7 V facilitating efficient conduction. Compact dimensions with length 40.02 mm, width 15.94 mm, and height 5.02 mm. Ideal for use in switching power supplies and industrial semiconductor circuits.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30 A.
This MOSFET has a voltage rating of 650 V.
It has a maximum power dissipation capability of 230 W.
The dimensions are 40.02 mm in length, 15.94 mm in width, and 5.02 mm in height.
It is packaged in a TO-247 through-hole case with 3 pins.
The maximum drain-source resistance is 90 mΩ.
The typical gate charge is 47 nC at the specified gate-source voltage.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage tolerance is up to 30 V.
It has a forward voltage drop of -1.7 V.
This model features an N-channel type.
It is commonly employed in switching power supplies and industrial electronics.
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