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DiodesZetex P-Channel Enhancement Mode MOSFET 600 mA 20 V 3-Pin SOT-323 DMP2900UW-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 900μm
Length 2mm
Model DMP2900UW-7
Width 1.8mm
Mount Type Surface
Series DMP2900
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200
Channel Type Type P
Maximum Continuous Drain Current Id 600mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 750mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 0.3W
Typical Gate Charge Qg @ Vgs 0.7nC
Maximum Gate Source Voltage Vgs 6V
Forward Voltage Vf -1.2V

Key Features

  • The device features a 3-pin SOT-323 surface mount package for compact PCB layouts.
  • It has a low maximum drain-source resistance of 750 mΩ to minimize power loss.
  • Operates with an enhancement mode channel type at a gate-source voltage of 6 V.
  • Supports a maximum power dissipation of 0.3 W ensuring reliable thermal performance.
  • Rated for operating temperatures ranging from -55°C to 150°C.
  • The MOSFET exhibits a typical gate charge of 0.7 nC at Vgs for fast switching.
  • Compliant with automotive standards AEC-Q101, AEC-Q100, and AEC-Q200, suitable for automotive applications.
  • Manufactured in China, providing consistent quality and origin traceability.

Product Description

DiodesZetex DMP2900UW-7 is a P-Channel enhancement mode MOSFET engineered to provide efficient switching performance with minimized on-state resistance, ideal for high-efficiency power management systems.

The device supports a maximum continuous drain current of 600 mA and a maximum drain-source voltage of 20 V. Its surface mount SOT-323 package with three pins allows for compact circuit board designs. The MOSFET achieves a low maximum drain-source resistance of 750 mΩ, reducing conduction losses during operation.

Operating within a gate-source voltage of 6 V and a power dissipation limit of 0.3 W, it ensures reliability under various thermal conditions. The component is qualified for a wide temperature range from -55°C up to 150°C, supporting demanding industrial and automotive environments.

The device features low typical gate charge of 0.7 nC, enabling fast switching and improved efficiency. Automotive standards compliance (AEC-Q101, AEC-Q100, AEC-Q200) make it highly suitable for automotive electronics applications requiring high reliability.

Its small form factor with dimensions of 2 mm length, 1.8 mm width, and 900 μm height supports space-constrained designs. Manufactured in China with strict quality controls. This MOSFET is ideal for industrial, electronic, automotive, and power management applications requiring durable and efficient semiconductor solutions.

Explore more components in our MOSFET category on EnvMart for additional semiconductor solutions and power management devices.

DiodesZetex P-Channel Enhancement Mode MOSFET 600 mA 20 V 3-Pin SOT-323 DMP2900UW-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 600 mA.

It can handle a maximum drain-source voltage of 20 V.

This model uses a SOT-323 surface mount package.

The maximum power dissipation for this MOSFET is 0.3 W.

The typical gate charge is 0.7 nC at the specified gate-source voltage.

It operates within a temperature range of -55°C to 150°C.

The maximum gate-source voltage is 6 V.

The dimensions are 2 mm in length, 1.8 mm in width, and 900 μm in height.

It complies with automotive standards AEC-Q101, AEC-Q100, and AEC-Q200.

The maximum drain-source resistance is 750 mΩ.

It features a P-Channel enhancement mode.

This model is manufactured in China.

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