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Vishay EF N-Channel Power MOSFET 16 A 600 V Enhancement Mode 3-Pin TO-220 SIHF068N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.6mm |
| Length | 28.6mm |
| Model | SIHF068N60EF-GE3 |
| Width | 10mm |
| Mount Type | Through Hole |
| Series | EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 68mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 39W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports continuous drain current up to 16 A for robust load management.
- Maximum drain-source voltage rating of 600 V suitable for demanding industrial environments.
- Low on-resistance of 68 milliohms reduces conduction losses for efficient operation.
- Typical gate charge of 51 nanocoulombs allows precise and predictable switching control.
- Maximum power dissipation capability of 39 W facilitating effective thermal management.
- Wide operating temperature range from -55°C to 150°C ensuring reliability in extreme conditions.
- TO-220 package enables easy heatsink mounting for optimized heat dissipation.
- Enhancement mode channel requiring positive gate-source drive for conduction.
Product Description
Vishay SIHF068N60EF-GE3 is an EF series N-channel power MOSFET optimized for power conversion and control circuits requiring high voltage and current handling. Encased in a TO-220 through-hole package, it facilitates conventional board assembly and enables efficient thermal management through heatsink attachment.
Capable of continuous drain current up to 16 A and with a maximum drain-source voltage of 600 V, this MOSFET supports robust load handling in industrial applications. Its low Rds(on) of 68 milliohms minimizes conduction losses, contributing to energy-efficient designs. The typical gate charge of 51 nC allows for predictable switching performance, essential for applications requiring precise gate drive timing.
This device operates in enhancement mode requiring a positive gate-source voltage for conduction and is rated for operation between -55°C and 150°C, making it suitable for environments with significant thermal variations. The maximum power dissipation of 39 W supports thermal planning in system design.
The TO-220 package design provides an exposed metal tab that can be mounted with heatsinks to enhance heat dissipation on loaded boards. This makes it ideal for industrial power converters, inverters, motor drive stages, lighting controllers, as well as test rigs and repair of legacy hardware.
Continuous drain current of 16 A for sustained load handling. Drain-source voltage rating of 600 V for high-voltage applications. Low on-resistance at 68 milliohms reduces energy loss. Typical gate charge of 51 nC facilitates controlled switching.
Power dissipation up to 39 W for thermal efficiency. Wide temperature range operation from -55°C to 150°C. TO-220 through-hole package allows heatsink mounting. Enhancement mode N-channel MOSFET for positive gate drive. Suitable for power converters, motor drives, lighting control, and legacy equipment repair.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 A, allowing it to handle robust load management in various applications.
This MOSFET has a maximum drain-source voltage rating of 600 V, making it suitable for high-voltage applications.
The on-resistance (Rds(on)) of this unit is 68 milliohms, which helps to minimize conduction losses and improve energy efficiency.
The typical gate charge for this MOSFET is 51 nanocoulombs, facilitating controlled and predictable switching performance.
This MOSFET can dissipate a maximum power of 39 W, which aids in effective thermal management during operation.
The operating temperature range for this model is from -55°C to 150°C, ensuring reliability in extreme conditions.
It is encased in a TO-220 package, which allows for easy heatsink mounting and efficient thermal management.
This model features a 3-pin configuration, which is standard for TO-220 packages.
This device is an N-channel MOSFET, which requires a positive gate-source voltage for conduction.
This model is compliant with RoHS standards, ensuring it meets environmental regulations.
The forward voltage drop (Vf) for this unit is 1.2 V, which is relevant for its performance in circuit applications.
This model supports through-hole mounting, making it suitable for conventional board assembly.
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