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Vishay N-Channel MOSFET 41 A, 600 V Enhancement, 3-Pin TO-263 Surface Mount SIHB068N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.06mm |
| Length | 14.61mm |
| Model | SIHB068N60EF-GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SiHB068N60EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 41A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 68mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- High power dissipation of up to 250 W ensures robust operation.
- Enhancement mode channel provides fast switching with low conduction losses.
- Maximum drain-source resistance (Rds) of 68 milliohms enhances efficiency.
- Wide operating temperature range from -55°C to 150°C supports diverse applications.
- Typical gate charge of 51 nC allows efficient gate control.
- Forward voltage drop is 1.2 V, minimizing power loss.
- 3-pin TO-263 package type is suitable for surface mount applications.
- Maximum gate-source voltage rating of 30 V ensures electrical reliability.
Product Description
Vishay SIHB068N60EF-GE3 is a high-performance N-Channel MOSFET designed for power electronics applications requiring efficient switching and high current handling capabilities. This MOSFET features a maximum continuous drain current of 41 A and a maximum drain-source voltage of 600 V, making it suitable for demanding industrial, automotive, and electronic power management uses.
Equipped with a 3-pin TO-263 surface mount package, the device enables compact PCB layout and high thermal dissipation with a maximum power dissipation rating of 250 W. The enhancement mode channel technology ensures reduced switching and conduction losses, improving overall system efficiency. Its low drain-source resistance of 68 milliohms minimizes on-state losses, which is critical in power supply circuits.
The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, allowing it to be used in harsh environments. Its typical gate charge of 51 nanoCoulombs supports rapid switching performance, essential for high-frequency power conversion. Forward voltage of 1.2 V reduces power losses, enhancing device efficiency during conduction.
Applications of the SIHB068N60EF-GE3 include industrial power supplies, motor control units, inverter circuits, and general power switching systems. The device's robust specifications and package form factor provide designers with a reliable component for space- and power-sensitive applications.
High power dissipation allows for demanding industrial and automotive applications. Enhancement mode channel delivers fast and efficient switching. Low on-resistance reduces conduction losses and improves efficiency. Wide operating temperature range ensures reliability in extreme conditions.
Compact TO-263 package simplifies PCB design and thermal management. Suitable for power supply, motor drives, and inverter circuits.
Explore the wide range of semiconductor components on EnvMart for your industrial and electronic projects. Enhance your designs by selecting quality MOSFETs such as the Vishay SIHB068N60EF-GE3 for reliable power management solutions.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 41 A.
This MOSFET has a maximum drain-source voltage rating of 600 V.
It can handle a maximum power dissipation of 250 W.
The device comes in a 3-pin TO-263 surface mount package.
The typical gate charge is 51 nC.
The maximum gate-source voltage rating is 30 V.
It operates over a wide temperature range from -55°C to 150°C.
The forward voltage drop is 1.2 V.
The maximum drain-source resistance (Rds) is 68 milliohms.
This model is suitable for applications such as industrial power supplies, motor control units, and inverter circuits.
It uses an enhancement mode channel, which provides fast switching with low conduction losses.
The dimensions are 14.61 mm in length, 9.65 mm in width, and 4.06 mm in height.
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